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DOWO LBAT54CLT1G
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO LBAT54CLT1G
- Type
- DOWO
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- LBAT54CLT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0231110380
- Current
- 200mA
- Diode
- 1
- Current(Ir)
- 2uA@25V
- (Vf)
- 1V@100mA
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage Rating(Vr)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
LBAT54CLT1G 产品概述
一、产品简介
LBAT54CLT1G 是东沃（DOWO）提供的一款小尺寸肖特基势垒二极管，采用 SOT-23 封装，适用于对导通损耗和开关速度有较高要求的小功率场合。型号后缀 C 通常表示双管共阴（或共阳）结构，方便在电源保护与整流电路中实现空间节省与单双通道选择。该器件兼顾低正向压降与低反向漏电，适合便携设备、消费电子和各类开关电源中的整流与保护用途。
二、主要电气参数
- 正向压降 (Vf)：1.0 V @ If = 100 mA
- 直流反向耐压 (Vr)：30 V
- 最大整流电流 (If)：200 mA（连续）
- 反向电流 (Ir)：2 μA @ Vr = 25 V (Ta = 25°C)
- 非重复峰值浪涌电流 (Ifsm)：600 mA（峰值脉冲，单次浪涌能力）
以上参数为典型/最大额定值，设计时应考虑温度与环境因素对 Vf 与 Ir 的影响，必要时参考器件完整数据手册进行热参数与短时极限的评估。
三、产品特点
- 小型 SOT-23 封装，适合高密度 PCB 布局与自动贴装生产；
- 低反向漏电，提升在待机或低功耗状态下的能量效率；
- 较低的正向压降在中等电流范围内可降低功耗与发热；
- 良好的浪涌承受能力，适合短时启动或突发电流负载；
- 适用于双通道或共阴（共阳）拓扑，节省 PCB 空间与外部连线。
四、典型应用场景
- 便携式设备的电源整流与电池反向保护；
- 开关电源 (SMPS) 的同步整流或输出二极管（在中小功率段）；
- 半导体保护电路（防反接、防反向电压）；
- 信号线路的钳位与保护；
- 消费电子、通信设备、仪器仪表中低压整流或隔离用途。
五、封装与 PCB 布局建议
- SOT-23 封装三引脚布置要求注意焊盘尺寸与过孔布局，保证可靠焊接与热扩散；
- 在 If 接近额定值时，应在焊盘下方与周围预留足够铜箔以改善散热；
- 对于高频开关场合，走线应尽量短且增大回流面积，减小寄生电感；
- 若并联使用多个器件，注意对称布局与一致热阻，以避免电流不均。
六、可靠性与使用注意
- 反向电流会随温度上升显著增加，长期高温工作会降低器件可靠性；
- 峰值浪涌 Ifsm 为非重复短时脉冲能力，不宜作为长时间过流设计依据；
- 在设计反向耐压边界时，预留适当裕量（例如 20% 以上）以应对过压瞬态；
- 储存和回流焊工艺应遵循元件的湿敏等级与回流温度曲线，避免焊接损伤。
七、总结与选型建议
LBAT54CLT1G 以其 SOT-23 小封装、低漏电与中等至低压整流能力，适合用于便携式电源、电池保护与一般整流保护场景。选型时若工作电流长期接近 200 mA，应重点评估散热路径与环境温度；若存在较严苛的浪涌或更高电压需求，应考虑更高额定值的肖特基或其他封装型号。建议结合完整器件规格书与实际应用条件进行最终确认。
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