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DOWO PESD15VL2BT-N PESD15VL2BT
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO PESD15VL2BT-N
- Type
- DOWO
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- PESD15VL2BT-N
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.035g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 40pF
- Electronic Component
- BM0230654933
- Voltage
- 30V
- Electronic Component
- IEC 61000-4-4；IEC 61000-4-5；IEC 61000-4-2
- Current(Ir)
- 100nA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
PESD15VL2BT-N 产品概述
一、产品简介
PESD15VL2BT-N 是 DOWO（东沃）推出的一款双路、双向瞬态抑制器（TVS），采用 SOT-23 小型封装，专为接口与信号线的静电放电（ESD）、电快速瞬变（EFT）及浪涌（Surge）保护而设计。器件针对工业级电磁兼容标准进行了设计，可满足 IEC 61000-4-2、IEC 61000-4-4 与 IEC 61000-4-5 等抗扰度要求。
二、主要电气参数
- 极性：双向（适用于正负极互换的信号）
- 反向截止电压 Vrwm：15 V
- 击穿电压（典型）：18.5 V
- 钳位电压（典型）：30 V（Ipp 条件下）
- 峰值脉冲电流 Ipp：6 A（8/20 µs）
- 峰值脉冲功率 Ppp：270 W（8/20 µs）
- 反向漏电流 Ir：100 nA（常温）
- 结电容 Cj：约 40 pF
- 通道数：双路
- 封装：SOT-23
三、性能特点与优势
- 双路集成，单封装实现两条信号线保护，节省 PCB 空间和物料成本。
- 双向结构适合对称信号（如差分信号、交流小信号）保护，无需额外偏置。
- 低漏电流（100 nA）有利于电池供电或低功耗系统的长期稳定性。
- 40 pF 的结电容在一般数据线和控制信号上影响有限，但高频差分高速接口需注意信号完整性评估。
- SOT-23 封装适配常见 SMT 工艺，易于自动贴装和回流焊接。
四、典型应用场景
- 各类接口保护：USB、串口（UART/RS-232）、TTL 信号线、键盘/触摸屏接口等。
- 通信设备与工业控制：保护现场总线、传感器线缆输入、模块化接口等。
- 消费电子与便携设备：防护外部插拔造成的静电冲击与瞬态浪涌。
- 其他需对抗 ESD/EFT/Surge 的应用场景。
五、设计与布局建议
- 将器件尽量靠近被保护的连接器或接口放置，最短保护引线以降低寄生感抗。
- TVS 至地的回流路径应尽量短且直接，保证有效的能量分流。
- 对高速差分信号，评估 40 pF 电容对码型、上升沿的影响；必要时选择更低电容型号或采用外部布局优化。
- 在高能量浪涌应用中注意 PCB 散热与多次脉冲下的热稳定性评估。
六、选型与使用注意
- 若工作电压接近或超过 15 V，应选择 Vrwm 更高的型号；击穿电压与钳位特性请在目标工作温度与实际应用脉冲条件下验证。
- 器件为静电敏感元件（ESD 类），在生产、存储和贴装过程中遵循 ESD 操作规范。
- 依据系统的最大脉冲能量及重现性要求评估是否需要并联或增加更高功率的抑制措施。
七、总结
PESD15VL2BT-N 以其双路双向保护、低漏电与紧凑封装，适用于多种需要接口防护的电子产品，能够有效应对常见的静电与瞬态冲击。设计时需权衡结电容对信号的影响并做好 PCB 布局，以发挥器件最佳保护效果。若需更高带宽或更大承受能量的保护方案，可结合系统需求进一步评估替代型号。
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