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DOWO 1N5819
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO 1N5819
- Type
- DOWO
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- 1N5819
- Electronic Component
- 1
- Package
- DO-41
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.295g
- Electronic Component
- 1
- Electronic Component
- BM0231093705
- Current
- 1A
- Diode
- 1
- (Vf)
- 600mV@1A
- Electronic Component
- 65℃~+125℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage Rating(Vr)
- 40V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
1N5819 产品概述
一、产品简介
1N5819 为典型的肖特基（Schottky）整流二极管，DOWO（东沃）品牌，DO-41 轴向封装。该器件针对低压、大电流脉冲整流与反向保护应用设计，具有快速开关、正向压降低的特点。主要基础参数：正向压降 Vf ≈ 600mV（在 1.0A 条件下）；直流反向耐压 Vr = 40V；额定整流电流 1A；非重复峰值浪涌电流 Ifsm = 25A；工作结温范围 -65℃ ~ +125℃。
二、主要特性
- 低正向压降：在 1A 时约 0.6V，有助于降低功耗和发热。
- 快速恢复/肖特基特性：开关速度快，适合高频整流与抑制回授瞬变。
- 中等电压等级：40V 的反向耐压适用于常见的直流电源与电池系统，但不适合高压场景。
- 耐冲击能力：Ifsm 25A（非重复峰值），能承受短时间的浪涌电流。
- 宽温度范围：工作结温 -65℃~+125℃，适应工业级环境。
三、典型应用场景
- 开关电源的输出整流与续流二极管
- 电池充放电路径与反向保护（如备用电源切换）
- DC-DC 转换器、降压模块的续流与肖特基整流
- USB、电源适配器和低压电源线路的整流与保护
- 电机驱动与瞬态电流抑制（作为短时浪涌缓冲）
四、选型与使用建议
- 连续工作电流以额定 1A 为基准，设计时应考虑散热与降额（ambient 温度、封装散热条件会显著影响能承载的连续电流）。
- 若电路可能出现长时间高反向电压或高温环境，应考虑更高 Vr 或更大功率器件。
- 对于高频整流，注意肖特基虽无反向恢复时间，但存在较高反向泄漏，温度升高时泄漏电流上升需关注。
- 浪涌（启动或短路）情形下 Ifsm 可承受短时脉冲，但频繁浪涌会损伤器件，应配合限流或保护电路。
五、封装与装配注意
- DO-41 轴向玻封，便于穿孔安装与手工焊接。焊接时遵守封装耐热限制，避免过长高温暴露以防引线或密封体损伤。
- 封装散热主要通过引线与PCB，必要时在PCB上增加铜箔散热或使用散热片。
- 储存与运输按普通半导体器件管理，避免潮湿与强机械冲击。
六、可靠性与替代方案
1N5819 适合常规低压整流与保护需求；若需更高反向耐压（例如 ≥ 60V）或更低正向压降（在更高电流下），可考虑更高规格的肖特基器件或功率二极管。选型时综合考虑 Vf、Vr、Ifsm、工作温度及封装散热条件，以确保长期稳定运行。
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