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DOWO 1N5822
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO 1N5822
- Type
- DOWO
- Minimum package
- 1000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- 1N5822
- Electronic Component
- 1
- Package
- DO-201AD
- Electronic Component
- Schottky Diode
- Electronic Component
- 1.102g
- Electronic Component
- 1
- Electronic Component
- BM0228586614
- Current
- 3A
- Diode
- 1
- Current(Ir)
- 300uA@40V
- (Vf)
- 550mV@10A
- Electronic Component
- 65℃~+125℃
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
1N5822（DOWO / 东沃）产品概述
一、概述与型号定位
1N5822 是一款常用的 Schottky 整流二极管，DOWO（东沃）提供的此型号面向中低压、大电流整流应用。该器件以低正向压降和快速开关特性为主，适合开关电源、降压转换器、续流和反向保护等场景。
二、主要电气参数
- 工作结温范围：-65℃ ~ +125℃
- 正向压降（Vf）：0.55 V @ 10 A（典型值）
- 额定整流电流：3 A（连续）
- 非重复峰值浪涌电流（Ifsm）：80 A（厂方给定的浪涌能力）
- 直流反向耐压（Vr）：40 V
- 反向电流（Ir）：300 μA @ 40 V（随温度上升会显著增加）
- 封装：DO-201AD（轴向引线封装，利于手工或通孔安装）
三、结构与封装特点
DO-201AD 轴向封装提供良好的机械强度和焊接可靠性，便于通孔板和手工焊接。Schottky 结构决定了其正向压降明显低于普通硅整流二极管，同时反向恢复时间几乎为零，适合高频开关环境。但轴向封装对散热依赖 PCB 和散热片布局，需注意导线与焊盘的热阻设计。
四、性能优势与局限
优势：
- 低正向压降，降低整流损耗，提高效率（尤其在低压大电流场合显著）。
- 极短的恢复时间，开关损耗小，适合高频电源。
- 良好的浪涌承受力，能够应对短时大电流冲击。
局限：
- 最大反向电压仅 40 V，不适用于高压整流场合。
- 反向漏电随温度上升快速增加，在高温环境下会影响静态功耗与系统稳定性。
- 连续额定电流为 3 A，长时间大电流应用需做好热量管理或选更高额定的器件。
五、典型应用场景
- 开关电源（DC-DC 降压整流）与次级整流。
- 负载续流/自由轮二极管（例如电感性负载保护）。
- 电池充电与电源反接保护（注意 Vr 与浪涌需求）。
- 低压大电流整流链路，在效率敏感的场合替代普通硅整流器。
六、使用建议与注意事项
- 散热管理：在连续 3 A 工作时，应保证足够的铜皮面积或加装散热器，轴向引线需尽量缩短热阻路径。
- 温度影响：设计时考虑反向漏电随温度上升的增长，若工作环境偏高温需留余量或改用低漏型/更高 Vr 器件。
- 浪涌保护：若存在频繁或更高幅值的浪涌，应评估 Ifsm 与实际脉冲条件（波形与持续时间），必要时并联或选择更高浪涌能力器件。
- PCB 布局：整流回路应尽量短、粗，焊盘与走线加厚以降低导通损耗和局部升温。
- 替换与选型：若需更高电压或更低漏电，可考虑高压 Schottky 或使用肖特基与肖特基管并联/热管理优化的方案。
结语：DOWO（东沃）封装为 DO-201AD 的 1N5822 以其低 Vf、快速响应和良好浪涌能力，被广泛用于中低压大电流整流场合。合理的热设计与对漏电随温度变化的预判，是确保长期可靠工作的关键。
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