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DOWO BZT52C4V7S
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO BZT52C4V7S
- Type
- DOWO
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- BZT52C4V7S
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Zener Diode
- Electronic Component
- 0.028g
- Electronic Component
- 1
- (Zzk)
- 500Ω
- (Zzt)
- 80Ω
- Electronic Component
- BM0264801994
- Diode
- 1
- Current(Ir)
- 3uA
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- 4.4V~5V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BZT52C4V7S — 4.7V/200mW 齐纳稳压二极管（DOWO）
一、产品概述
BZT52C4V7S 为 DOWO（东沃）品牌的独立式齐纳二极管，标称稳压值 4.7V，适用于低功耗、体积受限的表面贴装稳压与电压钳位场合。器件采用 SOD‑323 小封装，具备高稳定性与可靠性，特别适合便携式与消费类电子的稳压参考与浪涌保护。
二、主要参数
- 稳压值（标称）：4.7V
- 稳压值范围：4.4V ~ 5.0V
- 反向电流 Ir：≤ 3 µA（按厂方规定测试条件）
- 最大耗散功率 Pd：200 mW（在规定环境与散热条件下）
- 齐纳击穿阻抗 Zzt：80 Ω（测试条件下的动态阻抗）
- 膝部阻抗 Zzk：500 Ω（低电流区的阻抗特性）
- 二极管配置：单独式（1 个）
- 封装：SOD‑323（小外形表贴封装）
三、特性与优势
- 低击穿阻抗：Zzt 值较低，能在规定电流范围内提供较稳的电压输出，减小纹波与负载变化引起的电压漂移。
- 小功耗、易集成：200 mW 最大耗散功率适合低功耗设计，SOD‑323 封装利于尺寸受限电路板的布局。
- 高稳定性与可靠性：适合长期工作在受控电流下的电压基准与保护用途。
- 宽稳压范围：标称 4.7V 且允许范围 4.4–5.0V，方便在不同公差要求下选择与匹配。
四、典型应用
- 低功耗电压参考源（微控制器、ADC 参考）
- 电压钳位与浪涌保护（输入端或敏感节点）
- 直流稳压小功率模块的局部稳压
- 功率受限的便携式与消费类电子产品
五、使用建议与注意事项
- 功率与散热：SOD‑323 封装的散热能力有限，设计时应控制齐纳电流使耗散功率低于额定 Pd，并在环境温度升高时按厂方指导进行功率降额与散热评估。
- 工作点选择：为获得较低的动态阻抗与更稳定的稳压，应选择在规格化测试电流附近的工作电流；在极低电流区会出现较大的膝部电压漂移（由 Zzk 表征）。
- 布局与焊接：靠近稳压节点布线，避免长线引入寄生阻抗；采用适合 SOD‑323 的焊盘设计并遵循回流焊工艺规范以保证可靠焊点。
- 静电与浪涌：在装配与调试时注意静电防护，必要时在输入端加入限流元件或缓冲电路以避免瞬态损坏。
六、封装与订购
- 品牌：DOWO（东沃）
- 封装类型：SOD‑323，适用于自动贴片生产线。
- 订购时请参考完整型号 BZT52C4V7S，并向供应商索取完整规格书以获取详细测试条件、温度系数与曲线图等参数。
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