WMSIC Electronic Components

DOWO ESD5Z3.3

ModelESD5Z3.3
PackageSOD-523
BrandDOWO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
DOWO ESD5Z3.3
Type
DOWO
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
DOWO
Electronic Component
ESD5Z3.3
Electronic Component
1
Package
SOD-523
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.024g
Electronic Component
1
Cj- Capacitor
105pF
Electronic Component
BM0264254690
Voltage
14.1V
Electronic Component
IEC 61000-4-4;IEC 61000-4-2
Current(Ir)
50nA
Voltage(VBR)
5V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESD5Z3.3 产品概述

一、产品简介

ESD5Z3.3(DOWO/东沃)是一款单向瞬态电压抑制(TVS)二极管,封装为SOD-523,专为3.3V工作电压的接口防护设计。器件在静电放电与脉冲浪涌事件下提供快速钳位,有效保护下游芯片免受瞬态过压损坏。产品符合IEC 61000-4-2(静电放电)和IEC 61000-4-4(电快速瞬变)等电磁兼容防护标准。

二、主要参数概览

  • 极性:单向
  • 反向工作电压 Vrwm:3.3 V
  • 击穿电压 VBR:5 V(典型测试条件下)
  • 钳位电压:14.1 V(在标准8/20μs脉冲测试下)
  • 峰值脉冲功率 Ppp:240 W(8/20μs)
  • 反向电流 Ir:50 nA(在Vrwm条件下)
  • 结电容 Cj:105 pF(影响高速信号传输)
  • 封装:SOD-523(超小型表面贴装)

三、性能与特点

  • 响应快速:TVS结构提供纳秒级响应,适合瞬态抑制。
  • 高功率吸收:240 W(8/20μs)峰值功率能力,能承受常见的浪涌冲击。
  • 低漏电流:50 nA的反向电流有利于降低静态功耗,适合电源与I/O保护。
  • 小封装:SOD-523体积小、适配高密度PCB设计,但散热与功耗受限。
  • 结电容较高(105 pF),在高速差分总线或射频链路中会影响信号完整性,应谨慎选用。

四、典型应用场景

  • 3.3V电源防护与接口保护(GPIO、UART、SPI、I2C 等)
  • 手机、平板、智能穿戴、物联网终端及消费类电子产品的输入/输出接口防护
  • 模拟/数字混合电路中对瞬态浪涌的保护(非超高速数据链路)
    注意:对于高速串行接口(如USB3.0/HDMI/PCIe等),因结电容较大,不推荐使用。

五、使用建议与布局注意事项

  • 单向器件应按“线—TVS—地”方式连接,确保正确极性。
  • 封装小,建议将TVS靠近受保护的引脚放置,并保证流向地的回流路径短且低阻抗,以提升钳位效果。
  • 考虑散热与功率能力,若电路可能承受较高能量脉冲,可并联或选用更大封装的TVS。
  • 关注结电容对信号带宽的影响,必要时在数据手册基础上进行信号完整性仿真或实测。

六、选型与可靠性提示

在选型时除关注Vrwm、VBR和钳位电压外,应考量结电容对信号带宽、封装的热阻、以及实际的脉冲能量(是否超出240 W@8/20μs)。推荐在量产前完成ESD/EMC实验验证与长期温度循环测试,以确保在目标应用环境下的稳定性与可靠性。

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