WMSIC Electronic Components

DOWO PRTR5V0U2X-N PRTR5V0U2X

ModelPRTR5V0U2X-N
PackageSOT-143
BrandDOWO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
DOWO PRTR5V0U2X-N
Type
DOWO
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
DOWO
Electronic Component
PRTR5V0U2X-N
Electronic Component
1
Package
SOT-143
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.03g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
0.5pF;0.9pF
Electronic Component
BM0264548656
Voltage
16V
Electronic Component
IEC 61000-4-2
Current(Ir)
1uA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

PRTR5V0U2X-N 产品概述

一、产品简介

PRTR5V0U2X-N 是 DOWO(东沃)推出的一款双路超低结电容单片 TVS 二极管阵列,采用先进硅工艺制程,针对高速、低电压数据线的瞬态过压及静电放电(ESD)保护进行了优化。器件采用 4 引脚 SOT-143 无铅封装,体积小、响应快,适合手机、多媒体与高速接口等便携式产品的电气防护需求。

二、主要规格与性能

  • 极性:单向(适用于单端信号线保护)
  • 工作反向耐压 Vrwm:5 V
  • 击穿电压 VBR:6 V(典型)
  • 钳位电压(ESD):16 V(典型)
  • 峰值脉冲电流 Ipp:6.5 A(标准 IEC 测试条件下)
  • 反向漏电流 Ir:1 μA(在 Vrwm 下典型值)
  • 结电容 Cj:0.5 pF / 0.9 pF(器件典型平均约 0.6 pF,适配高速信号)
  • 通道数:双路(可同时保护两根数据线)
  • 防护等级:符合 IEC 61000-4-2,空气放电 ±20 kV,接触放电 ±15 kV
  • 封装:SOT-143(4 引脚,无铅)

三、关键优势

  • 极低结电容:每通道典型约 0.6 pF,有效降低对信号完整性的影响,适配高达数百兆赫兹甚至更高频率的数据总线。
  • 快速响应与低钳位:快速夹止瞬态过压,典型钳位电压 16 V,可在保护敏感器件的同时避免系统误动作。
  • 双路集成:单封装内集成两路保护,节省 PCB 空间并简化布局。
  • 工业级 ESD 抗扰度:通过 IEC 61000-4-2 空气 ±20 kV / 接触 ±15 kV 测试,适合抗静电场景要求高的消费电子与工业产品。

四、典型应用场景

  • 手机与便携式终端的外部数据/充电接口保护
  • 数字视频接口(如 MIPI、LVDS)与高速并行/串行数据线防护
  • USB、HDMI、耳机接口以及其他对信号完整性要求高的高速端口
  • 工业或医疗类便携设备的输入输出端口静电与瞬态浪涌防护

五、设计与布局建议

  • 将 PRTR5V0U2X-N 尽量靠近被保护的连接器或接口放置,以缩短走线并减少寄生感抗。
  • 对高速差分或单端线,在器件与连接器之间保持最短的回流路径,避免环路面积增大。
  • 对于对电容极其敏感的应用,可在样机上验证 0.5 pF / 0.9 pF 两通道对信号眼图及抖动的影响,必要时评估其他超低容抗 ESD 器件。
  • 与电源地采用单点或良好去耦策略,确保瞬态能量能迅速分流到地。

六、选型注意事项与总结

PRTR5V0U2X-N 以其超低结电容、双路集成与高等级 ESD 抗扰度,在保护高频敏感数据线方面具有明显优势。选型时应确认器件的单向特性与目标电路的工作电压(Vrwm=5V)匹配,评估钳位电压与被保护器件的耐受能力,并在 PCB 布局上优先考虑靠近接口安装。对于需要更高浪涌电流承受或双向保护的场景,可考虑其他系列或并联/改型方案。

总之,PRTR5V0U2X-N 是一款面向移动与高速数据接口的实用型 ESD 保护器件,适合在空间受限且对信号完整性要求高的应用中使用。

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