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DOWO BZT52C3V3
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO BZT52C3V3
- Type
- DOWO
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- BZT52C3V3
- Electronic Component
- 1
- Package
- SOD-123
- Electronic Component
- Zener Diode
- Electronic Component
- 0.069g
- Electronic Component
- 1
- (Zzk)
- 600Ω
- (Zzt)
- 95Ω
- Electronic Component
- BM0264356077
- Diode
- 1
- Current(Ir)
- 5uA
- Power Dissipation(Pd)
- 500mW
- Electronic Component
- 3.14V~3.47V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BZT52C3V3（DOWO/东沃）产品概述
一、产品概述
BZT52C3V3 是东沃（DOWO）推出的一款小功率齐纳二极管，单只独立封装，SOD-123 外形。该器件标称稳压值为 3.3V，稳压范围 3.14V~3.47V，具有低击穿阻抗、良好稳定性和可靠性，适用于小功率基准、偏置与浪涌钳位等场合。
二、主要参数
- 稳压值（标称）：3.3V
- 稳压范围：3.14V ~ 3.47V
- 反向漏电流 Ir：5 μA（典型/最大等级）
- 最大耗散功率 Pd：500 mW
- 击穿阻抗 Zzt：95 Ω
- 膝部阻抗 Zzk：600 Ω
- 封装：SOD-123（表面贴装）
三、电气特性解析
Zzt（95 Ω）代表在规定测试电流下的小信号动态阻抗，数值越低表示在工作电流变化时输出电压越稳定；Zzk（600 Ω）反映齿状转折区（knee region）处的阻抗特征，数值较大表明在极低电流下电压变化较明显。理论最大稳压电流 Iz_max 可由 Pd/Vz 估算：Iz_max ≈ 500mW / 3.3V ≈ 151 mA，但因 SOD-123 封装的散热限制，不建议长时间在该电流下工作，应适当降额使用以保证可靠性。
四、热管理与封装注意
SOD-123 为小型表贴封装，热阻相对较高，实际热路径主要依赖 PCB 铜箔面积和焊盘热导。设计时应在焊盘周围留足铜箔以增加散热面积，并遵循器件最大耗散功率限制。进行功耗计算时，应考虑稳压电压与电流的乘积以及瞬态脉冲可能带来的额外能量。
五、典型应用
- 低功耗电路的参考/偏置源（非精密基准）
- 信号线或电源的过压、浪涌钳位保护
- 小型传感器与接口电路的防护元件
- 简单稳压模块的后级稳压或保护元件
六、使用建议与可靠性
- 串联限流电阻：在用作稳压时必须串联限流电阻以限制电流并分配功耗。
- 降额设计：建议日常连续工作电流远低于 Iz_max（例如留有 30%~50% 的安全裕度），以延长寿命与提高热稳定性。
- 去耦措施：在稳压输出端并联电容有利于抑制瞬态与噪声，但应避免在高频脉冲下产生局部过热。
- 焊接工艺：遵循回流温度曲线与厂家推荐的焊接规范，避免过热或长时间高温暴露。
七、封装与采购信息
BZT52C3V3（DOWO/东沃）以 SOD-123 表面贴装提供，适合自动贴装与卷带（Tape & Reel）生产方式。器件定位为小功率、通用稳压/保护用途，选型时请结合实际工作电流、脉冲能量及PCB散热条件进行评估。若需更严苛的电压精度或更高功率能力，可考虑更低阻抗或更大封装的替代型号。
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