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DOWO MMBZ27VAL
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO MMBZ27VAL
- Type
- DOWO
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- MMBZ27VAL
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.016g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Electronic Component
- BM0264356187
- Voltage
- 40V
- Electronic Component
- IEC 61000-4-2
- Current(Ir)
- 50nA
- Voltage(VBR)
- 34.65V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBZ27VAL 产品概述
一、产品简介
MMBZ27VAL 是 DOWO（东沃）推出的一款双片式齐纳二极管，单向工作，采用双结共阳极（dual common‑anode）设计，封装为 SOT‑23。器件专为瞬态过压与静电放电（ESD）防护而优化，能够在单个小型封装内保护两条独立线路，特别适合空间受限的电路板和便携设备。
二、主要电气参数
- 极性：单向
- 反向截止电压 Vrwm：22 V（稳压工作点）
- 击穿电压 VBR：约 34.65 V
- 钳位电压（在指定冲击条件下）：约 40 V
- 峰值脉冲电流 Ipp：1 A
- 峰值脉冲功率 Ppp：40 W（峰值，具体测量条件请参见数据手册）
- 反向漏电流 Ir：约 50 nA（额定反向电压下典型值）
- 通道数：双路（双结共阳）
- 防护等级：符合 IEC 61000‑4‑2 ESD 防护要求
- 类型：ESD / 瞬态抑制
三、功能与典型应用
MMBZ27VAL 可为对电压瞬变和静电非常敏感的电路提供可靠保护，常见应用包括：
- 计算机与外设（USB、串口、并口等数据线）
- 打印机与商用自助设备
- 通信系统与网关设备的接口保护
- 医疗设备的低压信号线防护
- 其他要求低漏电和高抗冲击能力的 I/O 和控制线路
其双通道共阳极设计能在不增加封装数量的情况下保护两条独立信号线，节省PCB面积并简化布局。
四、布局与设计建议
- 将器件尽量靠近被保护的接口或连接器放置，以减小线路感性和寄生阻抗，提高抑制效果。
- 对于可能出现较大能量的冲击（超过器件 Ipp/Ppp），在保护器前增加限流电阻或使用功率更高的抑制元件以分担能量。
- 注意散热设计与焊盘热阻，持续或重复大能量冲击会导致器件温升，应避免在超出额定能量范围下长时间工作。
- 在高速信号线应用中，考虑器件电容对信号完整性的影响，必要时选择低电容版本或将保护器放在适当位置。
- 焊接工艺请遵循 SOT‑23 的器件焊接规范，避免过长高温暴露影响可靠性。
五、可靠性与合规
MMBZ27VAL 提供较低的反向漏电流和可靠的击穿/钳位特性，能满足 IEC 61000‑4‑2 等静电放电标准的防护需求。适用于对漏电和微弱信号敏感的系统，且由 DOWO（东沃）制造，适合大批量生产与量产替换。
六、封装与采购
- 品牌：DOWO（东沃）
- 封装：SOT‑23（小型三引脚封装，双路保护）
- 型号：MMBZ27VAL
如需进一步数据（如脉冲测试波形、钳位曲线、引脚配置与推荐焊盘尺寸），建议索取完整器件数据手册或联系供应商技术支持以获得详尽的测试条件与应用说明。
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