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DOWO BZT52C3V6S
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO BZT52C3V6S
- Type
- DOWO
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- BZT52C3V6S
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Zener Diode
- Electronic Component
- 0.028g
- Electronic Component
- 1
- (Zzk)
- 600Ω
- (Zzt)
- 90Ω
- Electronic Component
- BM0231033191
- Diode
- 1
- Current(Ir)
- 5uA@1V
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- 3.4V~3.8V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BZT52C3V6S 产品概述
一、产品简介
BZT52C3V6S 为小功率硅稳压二极管，标称稳压值为 3.6V，常用于低功耗电压基准、基极偏置及小信号钳位。该器件由 DOWO（东沃）生产，采用 SOD‑323 表面贴装封装，适合空间受限的便携和板级稳压方案。
二、主要电气参数与含义
- 稳压值（标称）：3.6V；稳压值范围：3.4V ～ 3.8V，表示在规定测试条件下的稳压公差区间。
- 阻抗 Zzk：600Ω；阻抗 Zzt：90Ω，两项分别反映在不同测试点或不同电流条件下的动态阻抗，直接影响稳压精度与输出纹波抑制能力。
- 反向电流 Ir：5µA @ 1V，表明在 1V 反向偏置时的漏电流水平，适合低漏电应用场景。
- 耗散功率 Pd：200mW，为器件在良好散热条件下允许的最大耗散功率，决定最大稳压电流与功率余量。
三、封装与安装
SOD‑323 为小型 SMD 封装，便于自动贴装与回流焊工艺。由于封装体积小，热阻较大，实际使用时应注意 PCB 铜箔面积与散热路径设计，以降低结温并延长可靠性。贴装前按一般 SMD 工艺处理，若有湿敏等级要求，请遵循厂商的回流前预烘说明。
四、典型应用场景
- 小电流电源基准：为传感器、低功耗 MCU 提供稳定基准电压。
- 基极偏置与参考：在放大器、比较器电路中作为参考或偏置源。
- 低能量钳位/过压保护：对小幅度过压进行限制（非高能量瞬态保护器件）。
- 电路板试验与模块化电源中的局部稳压单元。
五、使用与热管理建议
- 设计时应通过串联限流电阻或恒流源控制流经稳压二极管的电流，保证功耗不超过 Pd。
- 由于 Pd 为 200mW，建议在实际应用中留有裕量（例如控制在额定值的 50%～80% 范围内），以应对环境温升与散热不确定性。
- 在 PCB 设计上可适当增大焊盘面积或连接到大面积铜箔以改善散热性能。
- 避免用于需要吸收高能量冲击或大量脉冲能量的场合，若需瞬态抑制应选用专用 TVS 器件。
六、选型与注意事项
- 若目标电路对稳压精度、温漂和噪声有较高要求，需参考厂商更详细的特性曲线（如温度系数、稳压电流曲线、动态阻抗随电流变化图）。
- 对泄漏电流敏感的电路，应验证在目标工作电压下的反向电流表现。
- 购买时注意与原厂标识一致（品牌：DOWO，型号：BZT52C3V6S，封装：SOD‑323），并索取器件数据表以获得完整规范与焊接、储存要求。
以上为 BZT52C3V6S 的简要介绍与工程应用建议，可作为初步选型与电路设计参考。若需具体电流-电压曲线、温度特性或封装尺寸图，请提供数据表或允许查询厂方资料以给出更详尽的设计指导。
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