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DOWO AO3401PSA
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO AO3401PSA
- Type
- DOWO
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- AO3401PSA
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0264801995
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.2W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 780pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AO3401PSA 产品概述
一、概述
AO3401PSA 是东沃（DOWO）推出的一款高性能 P 沟道 MOSFET，SOT-23 小封装设计，适用于中低电压电源开关和高频硬开关场合。器件在保证小封装的同时，通过高密度单元工艺实现极低导通电阻，兼顾开关速度与散热性能，适合消费类和工业类电源管理应用。
二、主要规格
- 极性：P 沟道 MOSFET
- 漏源最大电压 Vdss：-30 V
- 连续漏极电流 Id：-4.1 A（负向表示 P 沟道）
- 导通电阻 RDS(on)：< 65 mΩ（VGS = -10 V）
- 最大耗散功率 Pd：1.2 W
- 阈值电压 VGS(th)：≈ -0.7 V（典型）
- 输入电容 Ciss：780 pF；反向传输电容 Crss：65 pF
- 工作温度范围：-55 ℃ ~ +150 ℃
- 封装：SOT-23
三、产品特性
- 优秀的小封装热性能：SOT-23 封装经过优化，利于 PCB 散热与密集布局。
- 超低导通电阻：在 VGS = -10 V 时 RDS(on) < 65 mΩ，可减小导通损耗。
- 适应高速开关：中等输入/反向传输电容（Ciss/Crss）兼顾驱动能耗与开关损失，适合硬开关与高频应用。
- 宽温度范围：-55 ℃ 至 +150 ℃，适合恶劣环境下长期可靠工作。
四、典型应用
- 高侧电源开关与负载断开（便于用 P 沟道实现高侧开关）
- 电池管理与电源路径选择、反向连接保护
- DC-DC 转换器中的开关管或同步整流（适用于较低功率等级）
- 工业与消费电子中的硬开关、高频开关电路
五、使用建议
- 栅极驱动：P 沟道在高侧应用时，栅源电压需相对于源极施加负向驱动，注意栅压不要超过器件最大额定值。VGS(th) 约 -0.7 V，实际驱动电压建议充分超过阈值以保证低 RDS(on)。
- 功耗与散热：SOT-23 封装的 Pd 为 1.2 W（器件自身限制与 PCB 散热密切相关），高电流工作时需通过铜箔面积和散热布局降低结温，避免长期热应力。
- 布局注意：尽量将散热铜箔连接到漏极/源极并缩短走线，减少寄生电感以利开关性能。
- ESD 与焊接：按常规 MOSFET 操作防静电，再流焊温度与湿敏级别按照供应商数据手册处理。
六、封装与热管理
SOT-23 封装便于表面贴装和空间受限场合，但热阻相对较大。推荐在 PCB 下侧或周围增加铜层并与多层地/电源层热连接，以提升功耗能力和可靠性。
七、选型要点
在选型时结合系统最大工作电压、连续/脉冲电流、允许的结温及开关频率综合考量。若需更低导通损耗或更高电流能力，可考虑更大封装或 RDS(on) 更低的替代型号。
总结：AO3401PSA 在-30 V、-4.1 A 级别的小功率高侧开关应用中提供了良好的导通性能与封装效率，是需要在 SOT-23 封装下实现低损耗高密度布局的理想选择。
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