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DOWO SI2302
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO SI2302
- Type
- DOWO
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- SI2302
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Electronic Component
- BM0257284064
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 700mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SI2302 产品概述
一、概述
SI2302 是 DOWO（东沃）推出的一款 SOT-23 封装单片 N 沟道功率 MOSFET，面向空间受限、低压功率控制场景。器件具有 20 V 漏源耐压、较低导通电阻和中等开关损耗特性，适合便携设备、电源管理及低压负载开关应用。
二、主要规格（关键参数）
- 类型：N 沟道 MOSFET（单个）
- 漏源电压 Vdss：20 V
- 连续漏极电流 Id：3.3 A
- 导通电阻 RDS(on)：45 mΩ @ Vgs=4.5 V
- 功耗 Pd：700 mW
- 阈值电压 Vgs(th)：1.2 V @ Id=250 μA
- 栅极电荷 Qg：4 nC @ Vgs=4.5 V
- 输入电容 Ciss：300 pF
- 输出电容 Coss：120 pF
- 反向传输电容 Crss（Crss）：80 pF
- 工作温度范围：-55 ℃ ~ +150 ℃
- 封装：SOT-23
三、电气性能与使用建议
在 Vgs=4.5 V 驱动时 RDS(on)=45 mΩ，可在较低电压下实现较小的导通损耗。Vgs(th)=1.2 V 表明器件为逻辑可驱动型，但为保证低损耗建议采用 4.5 V 以上栅极电压。Qg≈4 nC 表明栅极驱动电荷适中，适合 MCU 或驱动器直接驱动，但对高速开关需考虑驱动电流能力与门极电阻。
四、热管理与功率限制
器件额定耗散功率为 700 mW（在特定散热条件下），SOT-23 封装受限于较高的结-环境热阻。实际应用时需按 PCB 铜箔面积、焊盘设计及环境温度进行热设计并适当降额。长期连续大电流工作应评估 I²R 损耗与封装热能力，必要时采用并联器件或外部散热改善。
五、典型应用场景
- 电池供电设备的低侧开关与负载切换
- 便携式电源管理与保护电路
- DC-DC 转换器中的同步整流或开关元件（低功率段）
- MOSFET 驱动学习及一般开关控制
六、布局与驱动实务建议
- 保证栅极走线短而直，尽量靠近驱动器布置，必要时串联小电阻（10–100 Ω）抑制振铃。
- 对感性负载添加续流二极管或 RC 抑制网络，保护器件免受反向峰值冲击。
- 在输入侧并联去耦电容以降低开关瞬态电压尖峰。
- 评估 PCB 铜面积以提升散热，尤其在高占空比或连续导通场景。
七、选型注意事项
在选型时确认工作电压、瞬态电压裕量及脉冲电流能力，查看完整数据手册以获取安全工作区（SOA）、最大脉冲电流和热阻等详细参数。对需要更大功率或更低 RDS(on) 的设计，应考虑更高封装或并联方案。
总结：SI2302 以小封装、适中导通阻抗与较低门极电荷提供了在 20 V 级别下的实用低功耗开关解决方案，适合多数低压、空间受限的电子产品设计。
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