Model & package intelligence
Model text, package form, tray or reel details, and visual evidence are reviewed together before RFQ feedback.
DOWO HDW24M2T-B HDW24M2T
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO HDW24M2T-B
- Type
- DOWO
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- HDW24M2T-B
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- Electronic Component
- Type
- TVS
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 30pF
- Voltage
- 28.5V
- Electronic Component
- BM0264780392
- Operating Temperature
- 55℃~+125℃
- Voltage
- 58V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
HDW24M2T-B 产品概述
一、产品简介
HDW24M2T-B 是东沃（DOWO）推出的一款双路双向瞬态电压抑制二极管（TVS），采用 SOT-23 封装，专为 24V 工况下的浪涌与静电防护设计。器件通过 IEC 61000-4-2（静电放电）、IEC 61000-4-4（电快速瞬变）和 IEC 61000-4-5（浪涌）等测试标准，适用于工业控制、汽车电子、通信设备及电源接口等需要抗干扰保护的场合。
二、主要性能指标
- 极性：双向（Bidirectional）
- 反向截止电压 Vrwm：24 V
- 击穿电压 Vbr：28.5 V
- 钳位电压 Vcl：58 V（典型值，在 8/20 μs 浪涌条件下）
- 峰值脉冲电流 Ipp：9 A @ 8/20 μs
- 峰值脉冲功率 Ppp：420 W @ 8/20 μs
- 反向泄漏电流 Ir：500 nA（典型量级）
- 结电容 Cj：约 30 pF
- 通道数：双路
- 工作温度范围：-55 ℃ ～ +125 ℃
- 封装：SOT-23
- 类型：TVS（瞬态电压抑制器件）
三、产品特性与优势
- 双路双向设计，可在单一封装中并行保护两路信号或电源线，节省 PCB 面积与器件数量。
- 在 8/20 μs 浪涌测试条件下具有 9A 峰值脉冲电流承受能力和 420W 峰值功率吸收能力，能有效钳制瞬态过压，减轻后端电路损伤。
- 钳位电压约 58V，能在高能量脉冲下提供有效电压限制；击穿电压 28.5V，适配 24V 及其周边系统的保护需求。
- 低漏电流（约 500 nA）有利于节能与保证静态电路性能；结电容约 30 pF，在多数控制与通信应用中对信号完整性影响可控。
四、典型应用场景
- 24V 工业控制与 PLC 接口的入侵浪涌与 ESD 保护
- 通讯接口、RS-485、CAN 总线等差分信号线的瞬态抑制（需评估结电容对高速信号的影响）
- 车载电子子系统的局部防护（需按车规级要求验证）
- 电源输入端、适配器接口及其他容易受到雷击或开关扰动影响的电源/信号入口
五、使用建议与注意事项
- 布局：将器件尽量靠近被保护端口放置，走线短且粗以降低寄生电感和电阻，从而获得更好的抑制效果。
- 浪涌能力有限：Ipp 与 Ppp 为单次或短时脉冲能力，若需承受重复或更大能量冲击，应评估并并联更大能量的保护方案或级联多级防护。
- 信号完整性：结电容约 30 pF，应用于高速差分信号前需评估对速率与眼图的影响；对超高速或高精度模拟信号慎用。
- 热管理：在高重复冲击或高环境温度下注意热应力与长期可靠性，遵循器件的额定温度范围与 PCB 散热设计。
六、典型封装与选型说明
HDW24M2T-B 采用 SOT-23 小封装，适合密集 PCB 布局与成本敏感型设计。选型时请参考具体的浪涌能量、工作电压、泄漏容忍度及信号频率等参数，若需车规或更高功率等级，请联系东沃获取详细数据表与应用支持。
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