WMSIC Electronic Components

DOWO SJD12C30L01

ModelSJD12C30L01
PackageSOD-123
BrandDOWO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
DOWO SJD12C30L01
Type
DOWO
Minimum package
3000 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
DOWO
Electronic Component
SJD12C30L01
Electronic Component
1
Package
SOD-123
Electronic Component
Electronic Component
Type
TVS
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.039g
Electronic Component
1
Electronic Component
BM0230239726
Operating Temperature
55℃~+150℃
Voltage
48.4V
Current(Ir)
1uA
Voltage(VBR)
33.3V
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SJD12C30L01 产品概述

一、产品简介

SJD12C30L01 是东沃(DOWO)推出的一款双向瞬态抑制(TVS)二极管,采用 SOD-123 小封装设计,适用于对中低电平瞬态浪涌进行侧向钳位保护。器件设计用于快速响应瞬态过压事件,把能量钳位在安全电压范围内,从而保护下游的半导体器件与敏感电路。

二、主要特点

  • 极性:双向,适用于正负双向瞬态冲击(例如交流线路或双向数据线)。
  • 反向截止电压 Vrwm:30 V(反向工作电压)。
  • 击穿电压 VBR:33.3 V(典型)。
  • 钳位电压 Vcl:48.4 V(在规定脉冲条件下的钳位值)。
  • 峰值脉冲电流 Ipp:4.13 A(器件承受短时脉冲峰值能力)。
  • 反向电流 Ir:1 μA(在 Vrwm 下的漏电流,低泄漏适合对待机功耗敏感的系统)。
  • 工作温度范围:-55 ℃ 至 +150 ℃(适应工业级环境)。
  • 封装:SOD-123,适合表面贴装自动化生产。

三、关键电气参数说明

  • Vrwm(30 V):表示器件在正常工作状态下可承受的最大直流或开路反向电压。
  • VBR(33.3 V):进入雪崩击穿的电压区间,器件开始导通以吸收浪涌能量。
  • Vcl(48.4 V):在规定脉冲(典型为标准浪涌测试条件)下对浪涌时电压的钳位值,决定保护后端器件所能承受的最大电压。
  • Ipp(4.13 A):器件在单次峰值脉冲时能够通过的电流能力,反映瞬态能量吸收能力。
  • Ir(1 μA):在 Vrwm 下的静态漏电,可用于评估对低功耗电路的影响。

四、封装与引脚

SOD-123 表面贴装封装,体积小、热阻较低,适合密集 PCB 布局。双向 TVS 对称结构,外观上无极性标识需求,但仍需按数据手册推荐的焊盘与热流设计布局以保证散热与可靠性。

五、典型应用场景

  • 电源输入端与局部保护(30 V 等级的直流或更高峰值的脉冲环境)。
  • 串行通信接口、RS-485、CAN 总线等需要双向过压抑制的信号线路。
  • 工业设备、汽车电子外围保护(在满足器件温度与能量要求时)。
  • 消费电子中对静电与感应浪涌的保护应用。

六、设计与布局建议

  • 尽量将 TVS 紧靠被保护端口布置,走线最短以降低串联电感,提升钳位效果。
  • 在高能量场合配合串联电阻或熔断器使用,以分担能量并防止器件重复过载。
  • SOD-123 焊盘应按制造商推荐尺寸设计,并考虑足够的焊接与散热铜箔区域。
  • 在要求低电容的高速信号线上,评估 TVS 的寄生电容对信号完整性的影响。

七、存储与焊接注意事项

  • 存储环境避免潮湿,高温环境会影响焊接性与可靠性;如为防潮包装,应按回流焊工艺规定进行回潮处理。
  • 推荐遵循无铅回流温度曲线,避免过高的峰值温度和过长的热暴露时间,以防封装及内芯材料受损。

八、选型与替代建议

在选型时,除关注 Vrwm、Vcl 与 Ipp 外,还需确认浪涌波形、脉冲能量与重复出现频率。若需更高能量吸收能力或更低钳位电压,可考虑更大封装或线性级别更高的 TVS 器件;若侧重低电容特性,则查阅具体器件的电容参数并比较。

九、结语

SJD12C30L01 以其双向保护特性、30 V 工作等级与 SOD-123 紧凑封装,适合在空间受限且需对正负瞬态浪涌进行快速钳位保护的应用。实际选用时请结合系统浪涌能量、工作环境与 PCB 布局,参考厂商完整数据手册以获得最佳保护效果。

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