WMSIC Electronic Components

DOWO SMBJ51A

ModelSMBJ51A
PackageSMB(DO-214AA)
BrandDOWO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
DOWO SMBJ51A
Type
DOWO
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
DOWO
Electronic Component
SMBJ51A
Electronic Component
1
Package
SMB(DO-214AA)
Electronic Component
Electronic Component
Type
TVS
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.2g
Electronic Component
1
Electronic Component
BM0231033186
Operating Temperature
55℃~+150℃
Voltage
82.4V
Current(Ir)
1uA
Voltage(VBR)
56.7V
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SMBJ51A(DOWO 东沃)产品概述

一、产品概况

SMBJ51A 是一款单向瞬态电压抑制器(TVS),采用 SMB(DO-214AA)封装,适用于对瞬态过电压和雷击浪涌进行快速钳位保护的场合。器件以其稳定的钳位特性与高脉冲吸收能力,常用于 48V 工业/通信电源、防护输入端及各种敏感器件前端保护。

二、主要电气参数

  • 极性:单向
  • 反向工作电压 Vrwm:51 V
  • 击穿电压(典型):56.7 V
  • 钳位电压(Ipp 下):82.4 V
  • 峰值脉冲电流 Ipp:7.28 A(对应 10/1000 μs 波形)
  • 峰值脉冲功率 Ppp:600 W(10/1000 μs)
  • 反向漏电流 Ir:1 μA(在 Vrwm 条件下典型)
  • 工作温度范围:-55 ℃ 至 +150 ℃
  • 封装:SMB(DO-214AA)
  • 类型:TVS(未分类,单向)

三、性能与特性

  • 钳位迅速:在瞬态到来时迅速进入导通区,将电压钳制至约 82.4 V(在标准冲击条件下),有效保护后端电路元件。
  • 高能量吸收:600 W(10/1000 μs)额定能量,适合典型的电源浪涌与工业雷击脉冲。
  • 低漏电流:1 μA 的低反向漏电,便于在不影响系统静态功耗的前提下长期并联使用。
  • 宽温度范围:-55 ℃ 至 +150 ℃,适应苛刻环境与工业级应用。

四、典型应用场景

  • 48V 通信电源、以太网供电(PoE)输入保护;
  • 工业控制电源和配电系统的线路保护;
  • 电机驱动器、逆变器和电源模块输入端的浪涌吸收;
  • 继电器、接触器线圈回路及敏感接口的瞬态抑制。

五、选型与使用建议

  • 若系统工作电压接近或略高于 48 V,SMBJ51A 的 51 V Vrwm 是合适的选择;工作电压高于此时应选择更高 Vrwm 的型号。
  • 单向器件需按正确极性并联于电源线上:带有阴极标识的一端接电源正极(或按电路设计)。
  • 对于重复且高能量的浪涌场合,建议配合熔断器或限流器件使用,以保护 TVS 本体并提高整体可靠性。
  • 若需双向钳位(无极性要求),请选用对应的双向 TVS 型号。

六、封装、焊接与 PCB 布局

  • SMB 封装便于手工与波峰、回流焊接;焊接温度与曲线请参考厂方工艺规程。
  • 布局建议:短而宽的铜箔走线连接 TVS 两端,尽量靠近被保护器件或电源入口以减少寄生电感。必要时为散热设计加大铜面积或增加通孔以导热至另一面。

七、测试与可靠性验证

  • 在样机阶段,应使用 10/1000 μs 浪涌发生器验证钳位电压、峰值电流和器件的重复承受能力。
  • 测试内容包含:反向漏电、击穿电压、钳位电压与在温度边界下的性能验证(高温、低温循环)。

八、注意事项与对比

  • SMBJ51A 为单向 TVS,不适合需双向浪涌抑制的交流线路;若应用在更高能量或更低钳位需求场合,可选用更大封装(如 SMC)或系列并联方案。
  • 安装时注意极性标识与焊接工艺,避免长期超过额定功率或重复大幅度冲击,延长器件使用寿命。

总结:SMBJ51A(DOWO 东沃)凭借 51 V 的反向工作电压、82.4 V 的钳位能力及 600 W 的 10/1000 μs 能量吸收能力,在 48V 级工业与通信电源保护中具有良好性价比与实用性。合理布线、配合限流保护及充分测试,是发挥其可靠防护功能的关键。

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