WMSIC Electronic Components

DOWO 2R090M-S6242 2R090M

Model2R090M-S6242
PackageSMD,6.2x6.2mm
BrandDOWO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
DOWO 2R090M-S6242
Type
DOWO
Minimum package
800 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
DOWO
Electronic Component
2R090M-S6242
Electronic Component
1
Electronic Component
6.2mm
Package
SMD,6.2x6.2mm
Electronic Component
2
Electronic Component
(GDT)
Electronic Component
±20%
Electronic Component
2.7g
Electronic Component
6.2mm
Electronic Component
4.2mm
Electronic Component
1
Electronic Component
BM0264356082
Operating Temperature
40℃~+85℃
Capacitor
1pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2R090M-S6242 产品概述

一、产品简介

2R090M-S6242 是 DOWO(东沃)出品的一款贴片陶瓷气体放电管(Gas Discharge Tube,GDT),双极(2 极)结构,适用于各类电力浪涌与雷击防护场合。器件采用 SMD 封装,外形尺寸为 6.2 × 6.2 × 4.2 mm,体积小、耐冲击能力强,适合表贴自动化贴装和紧凑型保护电路设计。

主要参数一览:

  • 极数:2
  • 直流击穿电压 Vdc:90 V(±20%)
  • 冲击击穿电压 Vimp:600 V
  • 脉冲放电电流:5 kA
  • 极间电容:1 pF(典型)
  • 工作温度:-40 ℃ 至 +85 ℃
  • 封装:SMD,6.2 × 6.2 × 4.2 mm

二、主要特性与优势

  • 高电流承受能力:单次脉冲放电电流可达 5 kA,能有效吸收由雷电或开关瞬变引起的大能量冲击。
  • 低极间电容:典型 1 pF,适合高速信号或数据线场合,降低对信号完整性的影响。
  • 适配中低压系统:90 V 直流击穿电压(±20%),可用于直流 48 V、系统有一定过压裕度的交流/直流混合场景。
  • 小型 SMD 封装:6.2 × 6.2 mm 的贴片体积,便于在空间受限的板级防护位置采用自动化贴装。
  • 宽工作温度范围:-40 ℃ 至 +85 ℃,适应工业级应用环境。

三、典型应用场景

  • 电信设备与基站防雷:保护通信接口、供电线路、传输线免受雷击或远端浪涌影响。
  • 电力监控与测控终端:对电源输入、继电器驱动回路、电能计量回路提供浪涌钳位与泄放路径。
  • 工业控制与自动化设备:保护 PLC、变频器 I/O 端口及现场传感器接口。
  • 消费电子与车载电子(需按系统要求确认):在满足系统电压与认证前提下用于板级过压浪涌保护。
  • 数据与广播传输设备:用于对对称差分线路或屏蔽接口的板级保护,得益于低电容特性。

四、选型与使用建议

  • 击穿电压匹配:直流击穿电压 90 V(±20%)意味着在选型时应保证正常工作电压显著低于触发电压,同时考虑允许的触发容差与系统误触发可能性。
  • 放电能力与保护级别:5 kA 的脉冲放电能力适用于典型雷电和开关冲击情形;若系统可能遭受更高能量冲击,应采用并联多级保护(如 GDT + TVS 组合)。
  • 与并联器件配合:GDT 在放电时电压迅速下降,常与 TVS、MOV 或串联阻抗配合使用,以降低残压、控制放电形态并延长器件寿命。
  • 对高速信号的影响:1 pF 的低极间电容对信号幅度与相位影响小,适合差分数据线保护;仍建议在高频应用中进行具体的信号完整性评估。

五、封装与安装注意事项

  • 焊接与回流:作为 SMD 器件,请按照东沃推荐的回流焊温度曲线进行焊接,避免超出厂家规定的峰值温度与时间,以免内部气体或密封结构受损。
  • 机械应力:焊接后避免在器件上直接施加强力或在器件区域用力刮擦,防止基体破裂影响击穿特性。
  • 布局建议:将 GDT 放置于 PCB 边缘或靠近被保护的输入端,保证泄放路径短且接地回路低阻;接地引线应尽量短并采用多层地或加宽铜箔以降低残压。
  • 存储与保管:保持干燥、避免高温、高湿环境长期暴露;常规防潮包装与静电防护有助于长时间可靠存放。

六、可靠性与测试

  • 工程验证:在产品设计阶段,应基于预计雷击波形与能量对 GDT 进行实际浪涌测试(如 8/20 µs 或 10/1000 µs),验证残压、触发及重复放电能力。
  • 寿命与老化:气体放电管的寿命与经历的冲击次数、每次冲击能量和放电频率密切相关。建议对关键应用进行循环冲击测试并建立维护替换策略。
  • 故障模式:在极端过载或多次高能放电后可能导致永久性失效(开路或短路),因此在系统设计中应考虑冗余与监测手段。

如需进一步的技术资料(如典型 V-I 曲线、冲击波形下的残压曲线、回流焊温度曲线或 PCB 封装建议),可联系供应商或索取东沃最新的产品规格书与应用手册以获得详尽数据与验证规范。

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