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DOWO SM8S33AHE3_A/I-DW SM8S33AHE3_A
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO SM8S33AHE3_A / I-DW
- Type
- DOWO
- Minimum package
- 750 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- SM8S33AHE3_A/I-DW
- Electronic Component
- 1
- Package
- DO-218AB
- Electronic Component
- Electronic Component
- Type
- TVS
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 3.34g
- Electronic Component
- 1
- Electronic Component
- BM0264254693
- Voltage
- 53.3V
- Current(Ir)
- 10uA
- Voltage(VBR)
- 36.7V
- Electronic Component
- Electronic Component
- Electronic Component
- 750
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SM8S33AHE3_A/I-DW — 单向汽车级TVS管产品概述
一、产品简介
SM8S33AHE3_A/I-DW 是东沃（DOWO）推出的高可靠性单向瞬态抑制二极管（TVS），采用优化的玻璃钝化芯片工艺，结温能力高达175℃，为汽车电子与高可靠性工业应用提供强有力的浪涌保护。器件符合RoHS 要求，并通过AEC-Q101 认证，专为严苛电磁脉冲和负载突降环境设计。
二、主要特性
- 极性：单向（适合直流系统及车载总线保护）。
- 反向截止电压 Vrwm：33 V（适配常见12V/24V车载系统）。
- 钳位电压 Vc（Ipp）：53.3 V（在峰值脉冲条件下保持有效限制）。
- 峰值脉冲电流 Ipp：124 A（10/1000 μs 波形）。
- 峰值脉冲功率 Ppp：6600 W（10/1000 μs，重复率占空比0.01%）。
- 击穿电压 VBR：36.7 V。
- 反向泄漏电流 Ir：典型 ≤10 μA（在 Vrwm 条件下低泄漏）。
- 低正向压降、响应时间极快、出色钳位能力。
三、耐冲击与认证
本器件在 10/1000 μs 波形下具备6600 W 峰值功率承受能力，重复率为0.01%，可通过 ISO 7637-2（5a/5b）和 ISO 16750 负载突降测试（具体结果随测试条件而异）。同时通过 AEC-Q101 认证，适用于车规级可靠性要求的系统设计。
四、典型应用
- 汽车电子：ECU、电源总线、车载充电模块、车载信息娱乐与网关。
- 车载通信总线：CAN/LIN 端口防护。
- 电源保护：蓄电池旁路、继电器驱动与电机控制器输入侧保护。
- 工业与轨道交通：电源分配、传感器接口及远程终端设备防护。
五、封装与使用建议
- 封装：DO-218AB，适合波峰/回流焊工艺并便于散热管理。
- 热管理：器件结温可达175℃，但在高能脉冲场景下仍建议结合良好的PCB散热设计与铜箔扩展，避免长期高温应力。
- 布局建议：将TVS靠近受保护的器件或连接器放置，缩短导线长度以降低寄生感抗，确保钳位效果与响应速度。
- 可靠性提示：在不同测试条件下（如ISO 16750）钳位与寿命表现会有所差异，设计时应依据系统具体浪涌能量与占空比选择余量。
SM8S33AHE3_A/I-DW 以其高功率吸收能力、低泄漏与车规级认证，适合用于对浪涌与瞬态抑制有严格要求的电源与通信接口保护，是追求长期可靠性的工程设计首选。若需更详细的电气特性曲线与封装尺寸图，请提供具体需求以便获取数据手册。
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