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DOWO BZT52C62S
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO BZT52C62S
- Type
- DOWO
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- BZT52C62S
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Zener Diode
- Electronic Component
- 0.028g
- Electronic Component
- 1
- (Zzk)
- 1kΩ
- (Zzt)
- 200Ω
- Electronic Component
- BM0264801963
- Diode
- 1
- Current(Ir)
- 200nA
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- 58V~66V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BZT52C62S（DOWO）62V 齐纳二极管概述
一、产品简介
BZT52C62S 是 DOWO（东沃）提供的一款小功率表面贴装齐纳二极管，采用 SOD-323 封装，单颗独立器件。该器件设计用于高电压、小电流的稳压与电压钳位场合，特点为齐纳击穿阻抗低、稳定性高、可靠性好，适合要求体积小且工作在中高电压区域的电子设备。
二、主要参数
- 稳压值（标称）：62 V（典型范围 58 V ~ 66 V）
- 反向电流 Ir（泄漏）：200 nA（典型/最大规格）
- 最大耗散功率 Pd：200 mW
- 齐纳阻抗 Zzt：200 Ω（测试电流下的动态阻抗）
- 阶段阻抗 Zzk：1 kΩ（拐点/低流区的阻抗）
- 封装：SOD-323（表面贴装）
- 配置：1 个独立式二极管
说明：由于器件为小功率封装，实际稳压效果与负载电流有关；在低电流区（接近开阈电流）阻抗较大（Zzk1kΩ），在测试电流附近阻抗变小（Zzt200Ω），稳压精度随工作点变化。
三、电气与热设计注意事项
- 最大允许工作电流可由 Pd / Vz 估算：Imax ≈ 200 mW / 62 V ≈ 3.2 mA。因此应在电路设计中通过限流电阻或其它手段确保流经齐纳二极管的电流不超过此值。
- 反向泄漏电流极小（~200 nA），有利于低漏电应用，但在极低电流下稳压点会偏移，应避免长期工作在拐点电流以下。
- SOD-323 封装散热能力有限，需考虑印制板铜箔面积与散热走线，必要时采用更大的焊盘或散热铜皮以降低结温并按厂商热阻数据进行热降额设计。
四、典型应用场景
- 高压小电流参考电压源或偏置电路
- 电路板上对高压节点的轻度过压钳位与保护（非大能量冲击）
- 工业与通信设备中的电压检测与限位
- 测量仪器或传感器接口的高压保护/稳压模块
五、封装与选型建议
- SOD-323 为常见小型 SMD 封装，适合高密度贴装。设计 PCB 时推荐按元件供应商的封装推荐尺寸和焊盘布局，以保证可靠焊接与热传导。
- 若电路中存在较大瞬态能量或需要承受冲击脉冲，应选用专用 TVS 或更大功率的齐纳/稳压器件，避免 BZT52C62S 作为主能量吸收元件。
六、可靠性与使用建议
- 本器件强调高稳定性与高可靠性，但长期工作在靠近最大耗散功率或高结温条件下会加速老化，应确保实际功耗有裕量。
- 施工与回流焊工艺应遵循封装耐温曲线，防止过热导致性能退化。
- 建议在样机阶段进行温度-电压耦合测试与寿命评估，验证实际应用中的稳压精度与漏电特性满足设计要求。
总结：BZT52C62S 为一款适用于中高电压、小功率稳压与钳位的表面贴装齐纳管，凭借低击穿阻抗与良好稳定性，适合要求体积小、稳压精度中等且电流受限的应用场景。在设计时需注意最大耗散功率与散热条件，以确保长期可靠运行。
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