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ElecSuper ESD5451N-2-ES ESD5451N
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Elec Super ESD5451N-2-ES
- Type
- ELECSUPER
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ELECSUPER
- Electronic Component
- ESD5451N-2-ES
- Electronic Component
- 1
- Package
- DFN1006-2L
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.012g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 10pF
- Electronic Component
- BM0258771935
- Operating Temperature
- 40℃~+125℃
- Voltage
- 10V
- Electronic Component
- IEC 61000-4-2
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ESD5451N-2-ES 产品概述
一、产品简介
ESD5451N-2-ES 是由 ElecSuper（静芯微）推出的一款单通道双向ESD保护器件，采用超小型 DFN1006-2L 封装，专为对瞬态静电放电（ESD）和脉冲过压场景提供快速、可靠的保护而设计。器件在工作电压为 Vrwm = 5V 条件下工作，具有低泄漏电流、低结电容和宽工作温度范围，适用于便携式设备及高速数据接口的线路保护。
二、主要参数与特性
- 极性：双向（支持正负极性瞬态抑制）
- 工作电压（Vrwm）：5V
- 击穿电压（Vbr）：6V
- 钳位电压（Vclamp）：10V（典型值）
- 峰值脉冲电流（Ipp）：6A
- 峰值脉冲功率（Ppp）：60W（短脉冲能量吸收能力）
- 反向漏电流（Ir）：≤1 μA（在 Vrwm 下）
- 结电容（Cj）：约10 pF（适合多数高速信号线，影响较低）
- 通道数：单路
- 工作温度：-40 ℃ 至 +125 ℃
- 防护等级：符合 IEC 61000-4-2 ESD 抗扰度标准
- 封装：DFN1006-2L（超小贴片，适合空间受限的应用）
三、典型应用场景
- USB、UART、I2C、SPI 等 5V 及兼容电压的接口保护
- 手机、平板、可穿戴设备等便携式终端的外部 I/O 保护
- 工业控制与消费电子中需要抗静电及脉冲干扰的信号线保护
- 通信模块、射频前端外的控制信号和电源线路附加保护
四、设计及 PCB 布局建议
- 将 ESD5451N-2-ES 尽量靠近被保护的连接器或测试点贴装，以缩短受保护线路的回路长度并降低感应电压。
- 保持输入端到器件的走线最短、最粗，减小串联电感与阻抗。
- 做好底层地面回流和接地平面设计，避免将保护器件远离地或隔离在长回流路上。
- 对于高频或高速信号，结合器件 10 pF 的结电容评估对信号完整性的影响，必要时在 PCB 上采用差分对称布线或去耦策略。
五、可靠性与使用注意
- 器件可在 -40 ℃ 至 +125 ℃ 的温度范围内稳定工作，适应工业与消费场景。
- 在实际应用时应注意不超过器件规定的峰值脉冲电流（Ipp=6A）与功率（Ppp=60W），避免重复或过强的脉冲造成累积损伤。
- 双向结构适合在无固定极性的信号线上使用；若为单向供电或需更低钳位电压的场合，请按电路需求选型。
- 采用自动贴装与回流焊工艺时，请参考厂商焊接曲线与封装耐热信息以保证焊接可靠性。
六、选型建议
若系统工作电压接近或等于 5V 且需在有限空间内实现对单路高抗扰度的保护，ESD5451N-2-ES 是一种体积小、性能均衡的方案。对于要求极低结电容的超高速接口，可评估 10 pF 是否满足信号完整性需求；对更高能量抗冲击场景，需关注器件的额定脉冲能量并考虑并联或级联保护策略。若需了解更多应用测试数据或封装机械图，请联系 ElecSuper（静芯微）获取完整资料。
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