WMSIC Electronic Components

ElecSuper BSS138K

ModelBSS138K
PackageSOT-23
BrandElec Super
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Elec Super BSS138K
Type
ELECSUPER
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ELECSUPER
Electronic Component
BSS138K
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.021g
Electronic Component
1
Electronic Component
BM0230063712
Power Dissipation(Pd)
417mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
60V
Capacitor(Ciss)
25pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BSS138K 产品概述

BSS138K(品牌:ElecSuper / 静芯微)是一款小功率N沟增强型场效应管,采用SOT-23封装,适用于低电流、开关与电平转换等小信号场合。器件在紧凑封装下兼顾较高耐压与低输入电容的特点,便于高速开关与混合信号电路的集成。

一、主要特性

  • N沟道增强型MOSFET,逻辑电平可驱动,栅极阈值Vgs(th)典型约1.0V(Ib=250µA)。
  • 漏源耐压(Vdss):60V,适用中低电压场合的开关和保护用途。
  • 连续漏极电流(Id):400mA(器件热限及封装散热条件下)。
  • 低到中等导通电阻RDS(on):1.5Ω @ Vgs=10V,用于小功率负载开关。
  • 封装:SOT-23,便于表面贴装与自动化装配。

二、关键电参数

  • Vdss:60V
  • Id(连续):400mA
  • Pd(耗散功率):417mW(封装与PCB散热条件相关)
  • RDS(on):1.5Ω @ Vgs=10V
  • Vgs(th):1.0V @ Id=250µA
  • 总栅电荷Qg:650pC @ Vgs=4.5V(栅驱动能量与开关损耗评估参考)
  • 输入电容Ciss:25pF;输出电容Coss:9.7pF;反向传输电容Crss:2.2pF

三、封装与引脚

  • 标配SOT-23三引脚封装,适合PCB面积受限的设计。不同厂家封装引脚序列可能略有差异,请以厂家数据手册的封装图为准以确认G/D/S的准确位置和焊盘尺寸。

四、典型应用场景

  • 小信号开关与低电流负载控制(例如继电器/LED驱动的前级)。
  • 电平移位与逻辑接口(需注意在低Vgs下的RDS(on)变化)。
  • 便携设备与电源管理的小功率路径切换。
  • 过流/反向保护与简单功率控制电路。

五、使用建议与注意事项

  • 由于SOT-23封装热阻较大,耗散功率(Pd=417mW)受PCB铜箔面积和环境温度影响显著,长期工作时需对额定电流与功耗进行热沉降额定(derating)。
  • Qg较大([email protected]),在需要快速开关或高频驱动时,门极驱动能力与驱动损耗需评估,以免驱动器过载或开关损耗增大。
  • 在3.3V或更低逻辑电平下工作时,应验证RDS(on)是否满足系统损耗要求;若需更低导通电阻,可考虑更高Vgs驱动或选用低RDS(on)替代器件。
  • 注意静电放电防护,正确的焊接与处理流程可降低器件失效风险。

六、选型与替代建议

  • 若应用侧重更低的导通损耗或更大持续电流,应选择RDS(on)更低或功率封装更好的MOSFET。
  • 如需要更快的开关速度、较小Qg和更低Ciss的器件,可在同类逻辑场效应管中比对Qg/Ciss参数以优化驱动与效率。

总结:BSS138K以其60V耐压、SOT-23小封装和适中的导通电阻,适合空间受限的低功率开关与接口电路。但在高开关频率、大电流或高功耗场合,应重点考虑热管理与门极驱动能力,并以厂家最新数据手册为最终依据。

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