WMSIC Electronic Components

ElecSuper ES2102EI

ModelES2102EI
PackageSOT-323
BrandElec Super
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Elec Super ES2102EI
Type
ELECSUPER
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ELECSUPER
Electronic Component
ES2102EI
Electronic Component
1
Package
SOT-323
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0231110453
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.4W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ES2102EI 产品概述

一、概述

ES2102EI 是静芯微(ElecSuper)推出的一款小封装 N 沟道功率 MOSFET,封装为 SOT-323,额定漏源耐压 20V,适合便携式与空间受限的功率开关场合。器件兼顾低导通阻抗与较低栅电荷,便于在低电压门极驱动下实现高效率开关。

二、主要电气参数

  • 类型:N沟道 MOSFET
  • 漏源电压 Vdss:20V
  • 连续漏极电流 Id:4.5A
  • 导通电阻 RDS(on):37mΩ @ Vgs=4.5V;47mΩ @ Vgs=2.5V
  • 耗散功率 Pd:1.4W(SOT-323 封装条件下)
  • 阈值电压 Vgs(th):0.7V @ ID=250μA
  • 总栅电荷 Qg:6.5nC @ Vgs=4.5V
  • 输入电容 Ciss:323pF;反向传输电容 Crss:44pF @10V
  • 工作结温:-55℃ ~ +150℃

三、特性亮点

  • 低 RDS(on),在 4.5V 门极驱动下表现优良,适合 5V/4.5V 驱动系统;在 2.5V 驱动下仍能保持可接受的导通损耗,适用于 2.5V 或更低电平的逻辑控制。
  • 栅电荷 Qg 仅 6.5nC,开关损耗较小,利于提高开关效率并降低驱动功率。
  • SOT-323 超小封装便于高密度布局,适配移动设备和小型模块。

四、典型应用场景

  • 便携设备电源开关、负载开关(power path)
  • DC-DC 降压转换器低侧开关或同步整流(需注意封装散热限制)
  • 电池管理系统(BMS)与充放电控制
  • 信号控制与小功率马达驱动

五、设计与布局建议

  • 由于 Pd = 1.4W(封装限制),长时间大电流工作需在 PCB 上使用大面积铜箔或散热过孔以提升散热能力;建议在 PCB 测试中验证结温与热阻。
  • 门极驱动:若追求最低导通损耗,推荐 Vgs≈4.5V;若系统仅有 2.5V 驱动,可接受但应考虑增大安全裕量。
  • 在高速开关时,添加合适的门极电阻(10–100Ω)以抑制振铃,并在漏极与源极附近并联适当的回流电容与旁路电容以降低 EMI。
  • 布线时尽量缩短高电流回路(Drain–Source)路径,增大焊盘面积并增加多条过孔连接至内层散热平面。

六、选型与注意事项

  • 若应用需要持续高电流或高功率耗散,建议选用更大封装或评估并联方案。
  • Vgs(th) 仅表示导通起始电压,实际导通损耗应以 RDS(on) 与工作 Vgs 为准。
  • 在开关设计中关注 Crss 对回灌与开关损耗的影响,尤其在半桥或同步整流结构中需要考虑栅–漏耦合(Miller effect)。

ES2102EI 适合在对体积、成本与开关效率有均衡要求的小功率方案中使用,是移动与嵌入式电源管理中常见的实用选择。

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