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ElecSuper WNM2030-3/TR-ES WNM2030
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Elec Super WNM2030-3 / TR-ES
- Type
- ELECSUPER
- Minimum package
- 8000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ELECSUPER
- Electronic Component
- WNM2030-3/TR-ES
- Electronic Component
- 1
- Package
- SOT-723
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.011g
- Electronic Component
- 1
- Electronic Component
- BM0258806295
- Power Dissipation(Pd)
- 600mW
- Electronic Component
- Electronic Component
- Electronic Component
- 8000
- Voltage(Vdss)
- 20V
- Capacitor(Ciss)
- 60pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WNM2030-3/TR-ES 产品概述
一、产品简介
WNM2030-3/TR-ES 是静芯微（ElecSuper）推出的一款小型 N 沟道功率 MOSFET，封装为 SOT-723，适用于空间受限的便携设备与电源管理场景。器件额定漏源电压 20V，面向低压、中低电流的开关与驱动需求。
二、主要性能特点
- 漏源耐压：Vdss = 20V。
- 连续漏极电流：Id = 900mA（引脚与封装热阻限制下需按额定耗散与温升评估）。
- 导通电阻：RDS(on) ≈ 125mΩ（典型），最大 150mΩ @ Vgs = 4.5V。
- 阈值电压：Vgs(th) = 0.65V @ Id=250µA，属于逻辑电平门极器件。
- 功耗耗散：Pd = 600mW（SOT-723 封装，散热能力有限，需注意版上散热）
- 栅极特性：总栅极电荷 Qg = 1nC @ Vgs=4.5V，输入电容 Ciss = 60pF，反向传输电容 Crss = 12pF，输出电容 Coss = 22pF。
三、典型应用场景
- 便携式和电池供电设备的低侧开关与电源切换；
- LED 驱动与小电流负载开关；
- 便携式充电器、移动终端电源管理、物联网节点的功率开关；
- 低压电平移位、保护电路与负载断路控制。
四、设计与布局建议
- 封装为 SOT-723，热阻较高，建议在 PCB 使用较大铜面积或多层铜铺铜以提高散热；必要时使用散热过孔连通内层铜。
- 在开关应用中，得益于低 Qg 和小 Ciss，驱动能耗低，适合有限驱动能力的 MCU 直接驱动；高速开关时仍建议加上门极电阻以抑制振铃和减小 EMI。
- 在接近最大额定电流工作时，请按实际工作点计算 I^2·RDS(on) 损耗并考虑环境温度与散热条件，必要时进行额外的降额设计。
五、封装与采购信息
- 封装：SOT-723（超小型表面贴装），适合高密度 PCB 布局；
- 品牌：ElecSuper（静芯微）；型号：WNM2030-3/TR-ES；包装与最小订购量请参照厂商或经销商报价单。
此器件以小体积、低门极驱动和适中的导通电阻为主要卖点，适合对体积和栈板成本敏感、需在 20V 以下进行中低电流开关控制的应用。使用时请务必结合封装热特性与 PCB 散热设计进行可靠性评估。
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