WMSIC Electronic Components

ElecSuper BSS138BKS

ModelBSS138BKS
PackageSOT-363
BrandElec Super
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Elec Super BSS138BKS
Type
ELECSUPER
Minimum package
3000 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ELECSUPER
Electronic Component
BSS138BKS
Electronic Component
1
Package
SOT-363
Electronic Component
2 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.045g
Electronic Component
1
Electronic Component
BM0239903466
Operating Temperature
50℃~+150℃
Power Dissipation(Pd)
417mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
60V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BSS138BKS 产品概述

一、产品简介

BSS138BKS 是 ElecSuper(静芯微)出品的一款双路 N 沟场效应管,封装为 SOT-363,面向体积受限、低功耗且对开关速度有一定要求的便携与消费类电子应用。器件具有较高的漏源耐压和低频时较低的导通损耗,适用于小功率开关、信号控制与电源管理场景。

二、主要参数(典型/标称)

  • 类型:双通道 N 沟 MOSFET(SOT-363)
  • 漏源电压 Vdss:60 V
  • 连续漏极电流 Id:410 mA
  • 导通电阻 RDS(on):1.5 Ω @ Vgs=10 V;1.6 Ω @ Vgs=4.5 V
  • 最大耗散功率 Pd:417 mW
  • 阈值电压 Vgs(th):1.0 V @ Id=250 μA
  • 总栅极电荷 Qg:650 pC @ Vgs=4.5 V
  • 输入电容 Ciss:25 pF;输出电容 Coss:9.7 pF;反向传输电容 Crss:2.2 pF
  • 工作温度范围:-50 ℃ 至 +150 ℃
  • 封装:SOT-363;品牌:ElecSuper(静芯微)

三、主要特点

  • 高耐压:60 V 漏源耐压,适用于高于常规逻辑电平的小功率开关场合。
  • 低导通电阻:在典型驱动电压下 RDS(on) 约 1.5–1.6 Ω,导通损耗可控,适合低电流应用。
  • 小型封装:SOT-363 适合 PCB 面积受限的便携设备与多通道集成设计。
  • 中等栅极电荷:Qg=650 pC,说明在高频开关时需考虑驱动能量与开关损耗。
  • 宽温度范围:-50 ℃ 到 +150 ℃,适合工业与汽车等级附近的环境使用(请参考实际可靠性认证)。

四、典型应用

  • 低功耗负载开关与隔离(便携仪表、传感器节点)
  • 小电流电源管理与反向保护
  • 电平转换与信号开关
  • 板载功率路径切换、充电/保护电路

五、使用与 PCB 布局建议

  • 热管理:SOT-363 散热能力有限,Pd=417 mW 为器件在特定 PCB 条件下的耗散上限。实际使用时要计算导通损耗(I^2·RDS(on))与开关损耗,并留有裕量。必要时增加铜箔面积以改善散热。
  • 驱动电路:Qg 较大,短脉冲或高频切换需设计合适的驱动能力以避免开关损耗和过热。若仅做低频或开/关应用,使用 MCU 直接驱动通常可行,但应限制开关频率与上升/下降时间。
  • 布局:尽量缩短信号回路,保持漏—源与去耦电容之间的回路最短;栅极走线应尽量短并加上阻尼电阻以抑制振铃;靠近器件放置旁路电容,减小寄生电感。
  • ESD 与保护:在暴露 IO 或外部接口处加适当的瞬态抑制与限流元件,保护栅极不被超压损坏。

六、注意事项与可靠性建议

  • 参数取决于测试条件(温度、驱动电压、PCB 热阻等),在设计前请以实际样片的器件数据和应用板进行验证。
  • 连续大电流工作下需关注结温上升对 RDS(on) 和可靠性的影响;在高温环境中要留有安全裕量。
  • 如用于关键应用(如汽车、安全相关),请确认器件是否具有相应的认证与长期可靠性数据。

若需我帮您基于目标电流、开关频率或 PCB 面积计算热耗与驱动要求,或生成示意连接与 PCB 布局建议图,请提供具体工作条件(工作电压、最大电流、开关频率、可用 PCB 铜箔面积等)。

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