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ElecSuper 2N7002W
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Elec Super 2N7002W
- Type
- ELECSUPER
- Minimum package
- 3000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ELECSUPER
- Electronic Component
- 2N7002W
- Electronic Component
- 1
- Package
- SOT-323
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.028g
- Electronic Component
- 1
- Electronic Component
- BM0264576550
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2N7002W 产品概述
一、产品简介
2N7002W 是由 ElecSuper（静芯微）提供的一款小功率 N 沟增强型场效应管（MOSFET），采用 SOT-323 封装，面向低电压逻辑控制与小电流开关场景。器件具有 60V 漏源耐压与较低的栅极电荷，适合用于便携设备、信号开关和接口电平转换等应用。
二、主要规格
- 类型：N 沟道 MOSFET（增强型）
- 漏源电压 Vdss：60V
- 连续漏极电流 Id：300mA
- 导通电阻 RDS(on)：1.85Ω @ Vgs=10V；2.05Ω @ Vgs=4.5V
- 最大耗散功率 Pd：350mW
- 阈值电压 Vgs(th)：典型 1.6V
- 总栅极电荷 Qg：1.8nC @ Vgs=4.5V
- 输入电容 Ciss：28pF；输出电容 Coss：11pF；反向传输电容 Crss：4pF
- 工作温度范围：-55℃ ~ +150℃
- 封装：SOT-323（小尺寸）
三、主要特性
- 较高的耐压（60V），适合中等电压场合。
- 低栅极电荷与较小输入电容，有利于开关速度与驱动能耗的控制。
- SOT-323 小封装，适合空间受限的电路板布局。
- 额定耗散功率较低（350mW），更适合小电流或间歇性开关应用。
四、典型应用
- 低电流开关与信号隔离（继电器驱动前级、开关晶体管）
- 电平移位与逻辑接口（TTL/CMOS 电平）
- 便携式与手持设备的小功率负载开关
- 保护与熔丝替代电路中的低功耗场合
五、使用建议与注意事项
- 注意功率与热耗散：SOT-323 封装散热受限，连续靠近最大 Id 时需在 PCB 上增加铜箔散热或进行热裕量计算，避免长期工作在高温或高功耗条件下。
- 驱动电压选择：在 Vgs=4.5V 至 10V 区间导通电阻变化不大，但对于更低损耗建议提供接近 10V 的栅极驱动；若驱动电压较低，应检查 RDS(on) 是否满足系统电压降要求。
- 开关与 EMI：低 Qg 有助于降低驱动能耗，但开关瞬态仍可能产生电压尖峰，建议在需要时加缓冲网络（阻容抑制）或 TVS 进行抑制。
- ESD 与可靠性：小型封装对手工焊接和机械应力敏感，建议按制造商推荐的焊接与回流温度曲线操作，避免过热或机械损伤。
六、封装与环境
- 封装：SOT-323，适合高密度表面贴装。
- 工作温度：-55℃ 至 +150℃，满足大多数商业与工业级环境需求。
- 建议参考 ElecSuper 官方数据手册以获取完整的引脚排列、封装尺寸、典型特性曲线及推荐的 PCB 布局与焊接资料。
如需替代器件选型、等效电路示例或基于该型号的应用参考电路，可提供具体应用场景以便进一步分析与建议。
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