WMSIC Electronic Components

ElecSuper AO4407A(ES) AO4407A

ModelAO4407A(ES)
PackageSOP-8
BrandElec Super
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Elec Super AO4407A(ES)
Type
ELECSUPER
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ELECSUPER
Electronic Component
AO4407A(ES)
Electronic Component
1
Package
SOP-8
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.181g
Electronic Component
1
Electronic Component
BM0228786381
Power Dissipation(Pd)
3.1W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
30V
Capacitor(Ciss)
1.78nF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AO4407A(ES) 产品概述

一、产品简介

AO4407A(ES) 是 ElecSuper(静芯微)推出的一款 P 沟道功率 MOSFET,额定漏–源电压 30V,采用 SOP-8 封装。器件具有低导通电阻和适中的开关特性,适用于高侧开关、电源路径控制及倒置保护等场合。

二、主要参数

  • 类型:P 沟道 MOSFET
  • 漏–源电压 Vdss:30V
  • 导通电阻 RDS(on):9.5 mΩ @ VGS=10V;14 mΩ @ VGS=4.5V
  • 连续漏极电流 Id:12A(标准测试条件下)
  • 功率耗散 Pd:3.1W(SOP-8 包装条件下额定值)
  • 栅极阈值 VGS(th):≈1.5V @ ID=250µA(标称值,数据表为绝对值)
  • 总栅电荷 Qg:46 nC @ VGS=10V
  • 输入电容 Ciss:1.78 nF;输出电容 Coss:235 pF;反向传输电容 Crss:200 pF
  • 封装:SOP-8;品牌:ElecSuper(静芯微)

三、性能要点与设计意义

  • 低 RDS(on):在 VGS=4.5V 下 RDS(on) 为 14 mΩ,说明在较低栅压下仍能保持较低导通损耗,便于与微控制器或低压驱动直连(注意 P 沟道器件的栅源电压极性)。
  • 栅极电荷 Qg 较大(46 nC),驱动时需要考虑驱动电流和开关损耗,特别是在高频切换应用中,驱动器需能提供短时间较大的电流以快速充放栅电容。
  • Ciss/Coss/Crss 值表明器件具有中等开关能量存储,开关过渡期间可能产生显著能量损耗,应综合考虑导通损耗与开关损耗。
  • 封装与热性能:SOP-8 的 Pd 为 3.1W,在无散热的 PCB 环境下器件连续大电流能力会受限,需通过铜箔散热、过孔或散热片来提升散热能力。

四、布局与使用建议

  • 布线:尽量缩短电流回路走线,增大电源和地的铜皮面积以降低温升与寄生阻抗。
  • 栅极驱动:建议串联栅阻(例如 10–100Ω)以抑制振铃并限制瞬态电流;在需要快速切换时配合专用驱动器。
  • 拉高/拉低:在高侧应用中,配置合适的上拉/下拉电阻以保证断电或上电瞬间栅极处于安全电位。
  • 去耦与保护:开关节点附近放置足够的去耦电容;如有反向电流或电感性负载,需考虑续流或吸收元件以保护器件。
  • 热管理:在高电流工况下使用加大铜面或多过孔导热至底层,必要时设定热关断和电流检测保护。

五、典型应用

  • 电源高侧开关与电源路径选择
  • 电池管理与反向保护电路
  • 便携设备电源切换、负载断开
  • 低压电源模块和功率分配网络

六、注意事项

以上参数基于器件规格概要,实际设计时请以厂商正式数据手册为准,关注 VGS 最大允许值、SOA、脉冲峰值能力及热阻曲线。器件虽标称 12A 连续,但在实际 PCB 与环境温度下需按热设计进行电流能力评估并留足裕量。

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