WMSIC Electronic Components

ElecSuper AO3415

ElecSuper AO3415
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Product image

ModelAO3415
PackageSOT-23
BrandElec Super
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

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Technical data

Product details

19 specifications

Core information

Product name
Elec Super AO3415
Type
ELECSUPER
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ELECSUPER
Electronic Component
AO3415
Electronic Component
1
Package
SOT-23
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.033g
Electronic Component
1
Electronic Component
BM0258776120
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.39W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AO3415 产品概述

一、主要特性

AO3415 是一款单通道 P 沟道 MOSFET，适用于中低压高侧开关和电源管理场景。器件由 ElecSuper（静芯微）提供，封装为 SOT-23，具有体积小、驱动简便的优点。主要特性包括：耐压 Vdss = 20V、连续漏极电流 Id = 4.9A、导通电阻 RDS(on) = 30mΩ（Vgs = 4.5V）、最大耗散功率 Pd = 1.39W。

二、关键电气参数

  • 类型：P 沟道 MOSFET，单通道（1 个 P 沟道）。
  • 漏源耐压：Vdss = 20V，适合 12V 及以下系统的高侧开关应用。
  • 连续漏极电流：Id = 4.9A（需结合封装散热条件评估实际能力）。
  • 导通电阻：RDS(on) = 30mΩ（测试条件 Vgs = 4.5V），在较低栅压下 RDS(on) 会显著增加。
  • 阈值电压：Vgs(th) ≈ 700mV（测试电流 250μA）。
  • 开关相关电容与电荷：栅极电荷 Qg = 9.5nC（Vgs = 4.5V）；输入电容 Ciss = 750pF、输出电容 Coss = 115pF、反向传输电容 Crss = 80pF。
  • 工作温度范围：-55℃ ~ +150℃。

三、典型应用

  • 电池供电设备的高侧负载开关（便于用 P 沟道实现简单的高侧断开）。
  • 电源管理与负载切换、电源反接保护（配合合适电路可以作为反向电流阻断元件）。
  • 便携式消费电子、通信设备和工业控制中低电压电源路径控制。
  • 需注意：由于 Vdss = 20V，勿用于高于该电压范围的工业或汽车主电源(+12V 瞬态需评估)。

四、封装与热管理

SOT-23 小尺寸封装便于空间受限设计，但热阻相对较大。器件 Pd = 1.39W 表示在充分散热条件下可承受的最大功耗；在 PCB 实际应用中应通过加大焊盘铜面积、延长铜箔散热或者采用散热层来改善散热性能，避免长期高损耗工况导致结温升高影响可靠性。

五、设计与选型建议

  • 若驱动来自 3.3V 控制逻辑，需要验证在 Vgs = 3.3V 下的 RDS(on) 是否满足系统电源损耗要求；若要求更低压降，应选用更低 RDS(on) 或更高 Vgs 驱动方案。
  • 开关速度受 Qg 与 Ciss 限制，Qg = 9.5nC 属中等水平，若需高速切换建议增大驱动能力以缩短开关损耗。
  • 评估环境与浪涌条件，若有瞬态高压需求，应加保护元件或选更高 Vdss 的器件。
  • PCB 布局上建议减短电流回路、增大散热铜箔并在需用处放置旁路电容，以降低开关噪声与热集聚。

总体而言，AO3415 在 20V 以下中低压场景提供了体积小、驱动方便且性能均衡的 P 沟道解决方案，适合用于高侧开关与一般电源管理场合。

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