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ElecSuper BSC0702LS(ES) BSC0702LS
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Elec Super BSC0702LS(ES)
- Type
- ELECSUPER
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ELECSUPER
- Electronic Component
- BSC0702LS(ES)
- Electronic Component
- 1
- Package
- PDFN-8L(5x6)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.14g
- Electronic Component
- 1
- Electronic Component
- BM0258806362
- Power Dissipation(Pd)
- 156W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 5.44nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BSC0702LS(ES) 产品概述
一、概述
BSC0702LS(ES) 是一款高性能 N 沟道增强型 MOSFET，由 ElecSuper（静芯微）推出。器件采用屏蔽栅沟槽（shielded-gate trench）工艺，针对低导通损耗与高电流能力进行优化，适合 DC-DC 转换、电源开关与充电类电路等需要大电流与低导通电阻的应用。
二、主要参数
- 类型：N 沟道增强型 MOSFET
- 漏源耐压 Vdss：60 V
- 连续漏极电流 Id：190 A
- 导通电阻 RDS(on)：3.4 mΩ @ Vgs=4.5 V
- 耗散功率 Pd：156 W
- 阈值电压 Vgs(th)：2.5 V
- 总栅电荷 Qg：102 nC @ 10 V
- 输入电容 Ciss：5.44 nF；输出电容 Coss：2.2 nF；反向传输电容 Crss：135 pF
- 封装：PDFN-8L (5×6 mm)
三、关键特性与优势
- 低 RDS(on)（3.4 mΩ @4.5 V）可显著降低导通损耗，适合大电流路径。
- 屏蔽栅沟槽技术在保持低导通阻的同时有利于稳定开关特性。
- 较大的 Ciss 与 Qg 指示在高速开关时对驱动能力有较高要求，但能在合适驱动下实现低损耗切换。
四、典型应用场景
- 同步整流与高电流 DC-DC 转换器
- 电源开关与负载开关模块
- 电池充电管理与车载电源系统（需注意热设计）
五、封装与热管理建议
PDFN-8L (5×6) 紧凑封装要求良好底部焊盘与散热通路。建议在 PCB 下方设计大面积散热铜箔与多通孔热流路径，以利用器件 156 W 的热耗散能力；在高频或连续大电流工作时应进行热仿真并留有安全裕量。
六、驱动与 PCB 布局建议
- 由于 Qg=102 nC（10 V）与 Ciss 较大，推荐使用能够提供足够电流的驱动器，缩短开关时间以降低切换损耗。
- 使用合适的栅极电阻控制 dv/dt，防止振铃与过冲。
- 布局上保证栅、源、漏的回流路径最短、铜迹尽可能宽，旁路电容靠近器件电源端，提升可靠性与热性能。
BSC0702LS(ES) 在高电流、低导通损耗场合表现优异，但在驱动与热管理上有较高要求，选型时请结合实际工作点与完整数据手册评估。
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