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ElecSuper AON6312-ES AON6312
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Elec Super AON6312-ES
- Type
- ELECSUPER
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ELECSUPER
- Electronic Component
- AON6312-ES
- Electronic Component
- 1
- Package
- PDFN5x6-8L
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.13g
- Electronic Component
- 1
- Electronic Component
- BM0228788626
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 50W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AON6312-ES 产品概述
一、产品简介
AON6312-ES 是静芯微（ElecSuper）推出的一款高性能 N 沟道功率 MOSFET，额定漏源电压 30V，连续漏极电流高达 123A，单只器件适用于高电流、低导通损耗的开关场合。器件采用紧凑的 PDFN5x6-8L 封装，兼顾散热能力与 PCB 布局密度，适合现代电源和电机驱动设计。
二、主要参数
- 漏源电压 Vdss：30V
- 连续漏极电流 Id：123A
- 导通电阻 RDS(on)：1.7mΩ @ Vgs=10V；2.6mΩ @ Vgs=4.5V
- 阈值电压 Vgs(th)：1.75V @ 250µA
- 总栅极电荷 Qg：43nC @ 10V
- 输入电容 Ciss：3.1nF；输出电容 Coss：882pF；反向传输电容 Crss：103pF
- 耗散功率 Pd：50W
- 工作结温范围：-55℃ ～ +150℃（Tj）
- 类型：1 个 N 沟道，封装 PDFN5x6-8L
三、核心优势
- 低 RDS(on)，在 10V 驱动下仅 1.7mΩ，降低导通损耗，提升效率；
- 较大的 Id（123A）支持高峰值与连续大电流工况；
- 适中的 Qg（43nC）与 Ciss，便于高速开关与合理栅极驱动功耗权衡；
- 紧凑 PDFN5x6-8L 封装在保证热性能的同时适合高密度 PCB 布局。
四、典型应用场景
- 同步整流与降压转换器（DC-DC）
- 电池管理与电源分配开关
- 电机驱动与逆变器低侧功率开关
- 服务器、电信与工业电源模块
五、封装与热管理建议
PDFN5x6-8L 封装需配合较大的底部散热焊盘与多通孔铺铜，以降低结—壳热阻并提高散热能力。器件 Pd=50W 在实际应用中需根据 PCB 铜厚与冷却条件评估允许的持续功耗，推荐在高功率应用中使用散热铜箔和过孔热通道。
六、使用与设计注意事项
- 为发挥最低 RDS(on)，栅极驱动建议采用接近 10V 的驱动电压；在 4.5V 驱动下可工作但 RDS(on) 上升（2.6mΩ），需注意额外的导通损耗；
- 在高频开关时关注 Qg 与 Crss 带来的开关损耗与电压回冲，必要时采用合适的栅极阻尼与箝位措施；
- 设计 PCB 时保证低阻抗电流回路与良好散热路径，避免热斑与过热影响可靠性。
AON6312-ES 适用于追求高电流、低损耗与紧凑布局的电源与功率管理场合，是面向工业与通信等领域的实用选择。
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