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ElecSuper AO4805
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Elec Super AO4805
- Type
- ELECSUPER
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ELECSUPER
- Electronic Component
- AO4805
- Electronic Component
- 1
- Package
- SOP8
- Electronic Component
- 2 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.14g
- Electronic Component
- 1
- Electronic Component
- BM0228786379
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.9W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AO4805 产品概述
AO4805 是 ElecSuper（静芯微）推出的一款双路 P 沟道场效应管，封装为 SOP‑8，专为中低压高侧开关与电源管理场合设计。器件在‑55℃ 到 +150℃ 的宽温度范围内稳定工作，单芯片内集成两个 P 沟道 MOSFET，便于在紧凑电路中实现双通道高侧控制。
一、主要参数一览
- 漏源耐压：Vdss = 30V
- 导通电阻：RDS(on) = 15 mΩ（Vgs = −10V）
- 连续漏极电流：Id = 10A（单通道，见封装和散热条件限制）
- 功耗：Pd = 1.9W（封装热阻限制下的额定耗散）
- 输入电容：Ciss = 2.06 nF
- 输出电容：Coss = 370 pF
- 反向传输电容：Crss = 300 pF
- 栅极电荷：Qg = 30 nC（Vgs = 10V）
- 阈值电压：Vgs(th) = 1.5V（ID = 250 μA）
- 类型：P 沟道 MOSFET，封装 SOP‑8，双通道
二、产品特性与优势
AO4805 以低 RDS(on)（15 mΩ）和较低的 Coss/Crss 组合，提供良好的导通性能与开关特性，适合需要低导通损耗的高侧开关应用。双路集成在 SOP‑8 中，节省 PCB 面积并利于成组布局。阈值电压低（约 1.5V），易于被逻辑电平控制，但为实现最低 RDS(on) 应在接近 −10V 的栅电压下驱动。
三、典型应用场景
- 电池供电系统的高侧断开与电源路径切换
- 便携设备、移动电源的负载开关与电源管理
- 车载与工业控制中的电源保护与反向保护（注意耐压限制）
- 双通道高侧开关、半桥或电源分配模块
四、设计与使用建议
- 栅极驱动：Qg ≈ 30 nC，开关时需匹配驱动能力，建议使用带缓冲的驱动或在栅极串联 10–100 Ω 阻尼以抑制振铃。
- 热管理：Pd = 1.9W 表明在高电流持续工作时需依靠 PCB 铜箔散热，建议增大铜面积和使用散热过孔，避免器件在高温下长期工作超出额定。
- 布局：尽量缩短漏源回流路径、增大散热铜箔并靠近电源地；对快速开关场合注意减小寄生电感并在必要时增加 RC 吸收或 TVS 保护。
- 安全余量：器件 Vdss = 30V，实际应用中应保留电压余量，避免重复击穿与替代高压应用。
五、封装与可靠性
SOP‑8 封装利于常规 SMT 生产与双通道集成，适合批量制造与紧凑型电路板设计。器件在 ‑55℃~+150℃ 的工作温度范围使其适用工业级与车规级近似要求（仍须按系统级可靠性验证）。
总结：AO4805 以低导通电阻、双通道集成与合理的开关特性，适合中低压高侧开关、电源管理与便携电源应用。在设计时注意栅极驱动与 PCB 散热布局，可发挥其较高的电流承受与低损耗优势。
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