WMSIC Electronic Components

ElecSuper SI2302CDS-T1-GE3-ES SI2302CDS

ModelSI2302CDS-T1-GE3-ES
PackageSOT-23
BrandElec Super
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Elec Super SI2302CDS-T1-GE3-ES
Type
ELECSUPER
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ELECSUPER
Electronic Component
SI2302CDS-T1-GE3-ES
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0227760143
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
400mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SI2302CDS-T1-GE3-ES 产品概述

一、产品概况

SI2302CDS-T1-GE3-ES 是 ElecSuper(静芯微)出品的一款小功率N沟道MOSFET,采用SOT-23封装,适用于空间受限的消费类与工业电子应用。该器件额定漏源电压20V,连续漏极电流3.3A,典型导通电阻低至45mΩ(VGS=4.5V),同时支持宽温度范围,工作温度为-55℃至+150℃,适应严苛环境使用。

二、主要性能参数

  • 类型:N沟道增强型 MOSFET(单芯片,1个N沟道)
  • 漏源耐压(Vdss):20V
  • 连续漏极电流(Id):3.3A
  • 最大耗散功率(Pd):400mW(SOT-23 封装热性能限制,实际使用应参考版上热阻与散热条件)
  • 导通电阻(RDS(on)):45mΩ @ VGS=4.5V;62mΩ @ VGS=2.5V
  • 阈值电压(VGS(th)):约700mV @ ID=250µA
  • 总栅极电荷(Qg):约3nC @ VGS=4.5V
  • 输入/输出/反向电容:Ciss=200pF;Coss=35pF;Crss=28pF
  • 封装:SOT-23
  • 工作温度范围:-55℃ ~ +150℃

三、产品优势

  • 低导通电阻在中低电压驱动下能有效降低导通损耗,适合电源路径开关与低压负载驱动。
  • 低栅极电荷(3nC)便于快速开关、降低驱动能耗,适用于高效率开关电路或同步整流场景。
  • 紧凑SOT-23封装利于空间受限设计,适配手持设备、便携电源和PCB密集布局。
  • 宽温范围与可靠性参数满足工业级与汽车电子周边应用(需按系统级认证要求评估)。

四、典型应用场景

  • 电源路径控制(负载开关、背靠背保护开关)
  • DC-DC转换器中的功率开关或同步整流(中小功率)
  • 电池管理与便携设备电源开关
  • 通用驱动与信号切换场合

五、使用建议与布板要点

  • 由于SOT-23功耗受限(Pd=400mW),在持续大电流工作时应注意版面散热:扩大铜箔面积、增加散热层或使用多层PCB过孔散热。
  • 建议在栅极串联10Ω~100Ω门阻以抑制振铃并限制开关瞬态电流;根据开关频率与驱动能力选择合适门阻。
  • 若存在较大瞬态电压或反向电流,考虑在Drain端使用TVS或RC缓冲,或在源/漏间并联合适的续流二极管。
  • 参考Ciss/Coss/Crss数据进行驱动器选择与开关损耗估算,低Crss有利于降低米勒效应对开关过程的影响。

六、可靠性与环境适应

器件额定工作温度覆盖-55℃至+150℃,适合工业级温度要求。建议在高温或高功耗工况下进行实际功耗与结温仿真,验证长期热稳定性与寿命预期。

七、结语

SI2302CDS-T1-GE3-ES 以其低RDS(on)、低Qg与小尺寸封装,在中低电压、空间受限的电源管理与开关应用中具有较高性价比。设计时应综合考虑SOT-23的散热限制与开关条件,合理配置驱动与版面散热,以发挥器件最佳性能。

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