WMSIC Electronic Components

ElecSuper 2N7002-7-F-ES 2N7002

Model2N7002-7-F-ES
PackageSOT-23
BrandElec Super
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Elec Super 2N7002-7-F-ES
Type
ELECSUPER
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ELECSUPER
Electronic Component
2N7002-7-F-ES
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0265522755
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
350mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
60V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2N7002-7-F-ES N沟道场效应管产品概述

一、产品定位与基本属性

2N7002-7-F-ES是静芯微(ElecSuper)推出的单N沟道增强型MOSFET,属于小信号功率器件范畴。该器件专为低功耗、小电流场景设计,采用SOT-23小型表面贴装封装,具备体积紧凑、开关速度快、导通损耗低等特点,可广泛应用于消费电子、工业控制、物联网终端等领域的信号放大与小负载开关控制。

二、核心电性能参数解析

该器件的关键电参数覆盖电压、电流、功率、电容等维度,满足多数小信号应用需求:

  1. 电压参数:漏源击穿电压(Vdss)为60V,可应对中等电压场景;栅源开启电压(Vgs(th))典型值1.6V(测试条件:Ids=250μA),兼容3.3V、5V逻辑电平,无需额外电平转换即可由微控制器直接驱动。
  2. 电流与功率:连续漏极电流(Id)为300mA,最大耗散功率(Pd)350mW,适合小电流负载(如LED、传感器、轻载继电器等)的控制。
  3. 导通特性:导通电阻(RDS(on))表现优异——栅源电压Vgs=10V时为1.85Ω,Vgs=4.5V时为2.05Ω,低导通电阻可有效降低开关过程中的功率损耗,提升效率。
  4. 电容与开关特性:输入电容(Ciss)28pF、反向传输电容(Crss)4pF、输出电容(Coss)11pF,栅极电荷量(Qg)仅1.8nC(测试条件:Vgs=4.5V),低电容/电荷值使器件具备较快的开关速度,适合高频小信号切换场景。
  5. 温度适应性:工作温度范围为-55℃~+150℃,覆盖工业级温度需求,可稳定工作在极端环境(如户外传感器、车载低功耗模块等)。

三、封装形式与可靠性设计

2N7002-7-F-ES采用SOT-23封装,该封装为表面贴装式,体积小巧(标准尺寸约1.6mm×2.9mm×1.1mm),便于在高密度PCB设计中布局,适合小型化终端产品(如智能手环、无线传感器节点等)。

可靠性方面,器件通过宽温度范围设计,可承受高低温循环;SOT-23封装的引脚间距合理,焊接可靠性高,同时能有效抑制电磁干扰(EMI),满足对噪声敏感的应用场景(如模拟信号放大)。

四、典型应用场景

结合参数特点,该器件主要应用于以下场景:

  1. 小负载开关控制:如微控制器(MCU)输出控制LED指示灯、小型继电器、传感器供电回路等,300mA的连续电流可覆盖多数小功率负载。
  2. 电平转换与信号放大:因Vgs(th)兼容3.3V逻辑,可用于3.3V系统与5V外设之间的电平转换;低电容特性也使其适合低电平信号的线性放大(如音频前置放大、传感器信号调理)。
  3. 电池管理辅助电路:在低功耗电池产品中,用于电源路径切换(如主电池与备用电池切换)、低电流负载的通断控制,降低待机功耗。
  4. 物联网终端模块:如无线传感器节点、蓝牙低功耗(BLE)设备中的信号切换、电源控制,适配小型化封装需求。

五、品牌与技术优势

静芯微(ElecSuper)作为专注功率半导体的品牌,2N7002-7-F-ES具备以下技术优势:

  • 参数一致性:批量生产中电参数偏差小,确保终端产品性能稳定;
  • 低损耗设计:低导通电阻与低栅极电荷结合,提升开关效率,降低发热;
  • 工业级可靠性:宽温度范围与SOT-23封装的可靠性设计,满足严苛环境应用;
  • 成本效益:在同规格器件中具备较高性价比,适合量产需求。

六、总结

2N7002-7-F-ES是一款性能均衡的单N沟道MOSFET,以紧凑封装、低损耗、宽温度范围为核心特点,精准匹配小信号放大与小负载开关控制场景。无论是消费电子的小型化设计,还是工业控制的极端环境应用,该器件均能提供可靠的性能支持,是替代传统2N7002系列器件的优质选择。

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