WMSIC Electronic Components

ESPRESSIF ESP32-S3FH4R2 ESP32

ModelESP32-S3FH4R2
PackageSMD
BrandESPRESSIF
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
ESPRESSIF ESP32-S3FH4R2
Type
ESPRESSIF
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ESPRESSIF
Electronic Component
ESP32-S3FH4R2
Electronic Component
1
Package
SMD
Electronic Component
Other Module
Electronic Component
0.22g
Frequency
2.4GHz
Electronic Component
1
Power
21dBm
Current
340mA
Electronic Component
BM0226525505
Operating Temperature
40℃~+85℃
Operating Voltage
3V~3.6V
Interface Type
SDIO;JTAG;UART;SPI;I2C
Receiver Current
88mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESP32-S3FH4R2 产品概述

一、概述

ESP32-S3FH4R2 是乐鑫(ESPRESSIF)推出的一款高集成度 RF SoC SMD 封装芯片,集成双核 LX7 处理器与 2.4GHz Wi‑Fi / Bluetooth 5.0 无线子系统。芯片内含 4MB 闪存与 2MB PSRAM,QFN 56 引脚(7×7 mm)封装,工作温度范围 -40℃ 至 +85℃,适合对体积、成本和功耗有较高要求的物联网与嵌入式应用。

二、主要规格

  • 射频频段:2.4 GHz(Wi‑Fi 与 BLE 组合)
  • 发射功率:最高 21 dBm
  • 无线协议:Wi‑Fi(2.4GHz)与 Bluetooth 5.0
  • 核心处理器:双核 LX7(高性能嵌入式内核)
  • 内部存储:4 MB Flash、2 MB PSRAM(片内)
  • 接口类型:SDIO、JTAG、UART、SPI、I2C 等
  • 工作电压:3.3 V
  • 工作温度:-40℃ ~ +85℃
  • 封装:QFN 56 引脚,7 mm × 7 mm,SMD

三、核心功能亮点

  • 高集成度:内含闪存与 PSRAM,减少外部器件需求,缩短开发周期与 BOM 成本。
  • 强无线能力:支持 2.4GHz Wi‑Fi 与 Bluetooth 5.0,发射功率高达 21 dBm,覆盖能力与抗干扰性能良好。
  • 多用途处理能力:双核 LX7 处理器适合同时处理无线协议栈与应用任务,适合边缘计算、传感与控制类场景。

四、外设接口与扩展

  • SDIO:可用于外部主机/外设互联或作为高速外设接口。
  • JTAG:标准调试与跟踪接口,便于固件调试与系统验证。
  • UART:常用于串口调试、外设通信与固件下载。
  • SPI:高速外设连接(显示、外部闪存、外设控制)。
  • I2C:低速传感器与外设总线,便于连接各类传感器与扩展模块。 这些接口组合为系统设计提供了灵活的外设接入能力,适配多种应用需求。

五、封装与电源建议

  • 封装:QFN56(7×7 mm)便于表面贴装与批量生产。布板时需注意热散与地平面连续性。
  • 电源:工作电压 3.3 V,建议使用低噪声 LDO 稳压源。靠近 VDD 引脚布置去耦电容(例如 0.1 μF 与 1 μF/4.7 μF 组合),并在电源输入处加入 10 μF 以上的大电容用于突发射频功耗滤波。
  • 射频匹配:若使用外部天线或芯片天线引出,必须进行射频匹配与调谐,保证 2.4 GHz 带宽与回波损耗指标。

六、典型应用场景

  • 智能家居与家电控制(Wi‑Fi 云接入 + BLE 近场配网)
  • 工业物联网与远程传感器节点(-40℃ 至 +85℃ 工况)
  • 可穿戴与便携设备(高集成、低 BOM)
  • 语音唤醒与边缘推理设备(双核处理并行任务)

七、设计与使用建议

  • 布局:射频部分应当远离大电流开关元件,天线周围保持足够无金属空间与地面连续性,避免地切割增加寄生。
  • 去耦与退耦:在 VDD 和 VDD_SDIO 等电源引脚附近放置多级去耦电容,减少瞬态压降对无线性能的影响。
  • ESD 与保护:对外引脚加 ESD 抑制元件及合适的串联电阻,提高系统可靠性。
  • 引导配置:注意引脚的引导电平(boot strapping)和外部复位电路设计,以确保稳定上电与下载模式切换。
  • 调试:利用 JTAG 与 UART 进行固件调试与日志输出,缩短开发周期。

总结:ESP32-S3FH4R2 结合了高无线性能、丰富接口和片内存储,适合需要紧凑硬件平台与可靠无线连接的商业与工业产品。在 PCB 设计与电源管理上遵循射频器件的良好实践,可以最大化芯片性能并保证长期稳定性。

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