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FH CBM201209U121T
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FH CBM201209U121T
- Type
- FH
- Minimum package
- 4000 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FH
- Electronic Component
- CBM201209U121T
- Electronic Component
- 1
- Package
- 0805
- Electronic Component
- Ferrite Bead
- Electronic Component
- ±25%
- Electronic Component
- 0.027g
- Electronic Component
- 1
- Channel Count
- 1
- Electronic Component
- BM0230044037
- Operating Temperature
- 55℃~+125℃
- Current
- 4A
- @Frequency
- 120Ω@100MHz
- Resistor(DCR)
- 45mΩ
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
CBM201209U121T 产品概述
一、产品简介
CBM201209U121T 为风华（FH）系列贴片磁珠，0805 封装（2012英制尺寸），单通道器件。该型号在高频段具有显著抑制能力，典型阻抗为 120Ω @ 100MHz，适用于对高频共模和差模干扰的抑制与滤除。器件工作温度范围宽 (-55℃ ～ +125℃)，适合多种工业与消费类电子环境。
二、主要电气参数
- 阻抗（Z）：120Ω @ 100MHz
- 直流电阻（DCR）：约 45 mΩ（典型值，部分资料列出 50 mΩ）
- 额定电流：4 A（如有疑义建议按 3 A 保守选型并参照厂家最新资料）
- 阻值公差：±25%
- 通道数：1（单线）
- 封装：0805（2012）
- 工作温度：-55℃ ～ +125℃
注：市面描述存在轻微差异（例如 DCR 50mΩ、额定电流标注 3A），选型时应以厂家最新版规格书和实测样品为准。
三、器件特性与优势
- 高频阻抗高，能在 100MHz 附近显著衰减射频噪声，适合抑制开关转换与传导干扰。
- 低直流电阻使其在电源线应用时电压降小，适合高电流路径（如 DC-DC 输出、USB/PD 供电）。
- 宽温范围和贴片封装支持自动化回流焊装配，并能满足大多数商用与工业温度要求。
- ±25% 公差为常规磁珠容差，适应一般 EMI 抑制设计的余量需求。
四、典型应用场景
- 开关电源输出滤波、负载侧高频噪声抑制；
- 手机、平板与消费类主板的功率和信号线去耦；
- 网络设备、通信模块、USB/PD 等高速接口的共模/差模噪声控制；
- 汽车电子与工控设备中的 EMI 管理（需注意满足车规级认证时参照车规件）。
五、布局与使用建议
- 将磁珠尽量靠近噪声源（例如开关晶体管、电源引脚）或靠近电源进入点布局，后端配合旁路电容形成有效滤波网络。
- 对于电源线应用，关注 DCR 带来的压降与发热，若长时大电流工作建议做热仿真或实测温升；遇到规格不确定时，可按较低额定电流（如 3A）保守选型。
- 回流焊温度兼容常见工艺，但应避免过度机械应力与重复高温循环以防裂纹或性能退化。
- 需注意 ±25% 的阻抗公差对滤波截止频率的影响，关键应用建议以样品测试为准。
六、选型与替代考虑
如需更低 DCR 或更高稳定电流能力，可考虑同厂或其他供应商的高功率磁珠或低阻抗滤波器件；若需更严格阻抗公差或更高频段性能，可选择专用 EMI 滤波组件。最终选型应基于实际电路测量、热设计与制造工艺验证。
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