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FUXINSEMI STTH112A
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI STTH112A
- Type
- FUXINSEMI
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- STTH112A
- Electronic Component
- 1
- Package
- SMA(DO-214AC)
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0g
- Electronic Component
- 1
- Electronic Component
- BM0227636319
- Current
- 1A
- Diode
- Electronic Component
- Current(Ir)
- 5uA@1200V
- (Vf)
- 1.9V@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
STTH112A 产品概述
一、产品简介
STTH112A 是一款独立式快恢复、高效率二极管，由 FUXINSEMI（富芯森美）出品，采用 SMA (DO-214AC) 封装，针对高压整流与开关电源应用进行了优化设计。器件在 1A 工作电流下具有较低的正向压降与较快的恢复特性，适合高压开关、整流及续流保护等场景。
二、主要参数
- 正向压降 (Vf)：1.9V @ IF = 1A
- 直流反向耐压 (Vr)：1200V
- 连续整流电流：1A
- 反向电流 (Ir)：5 μA @ VR = 1200V
- 反向恢复时间 (Trr)：75 ns
- 非重复峰值浪涌电流 (Ifsm)：50A
- 工作结温范围：-55 ℃ ~ +150 ℃
- 封装形式：SMA (DO-214AC)，独立式表面贴装
三、产品特点
- 高耐压：1200V 额定反向耐压，满足高压侧整流及高压电源设计要求。
- 快恢复：75ns 的反向恢复时间，有效降低开关损耗与电磁干扰，适用于中高速开关频率场合。
- 低漏电：在额定耐压下反向漏电仅 5 μA，有利于降低待机损耗和热应力。
- 可靠性高：工作结温范围宽（-55℃ 至 +150℃），适应工业级环境。
- 封装小巧：SMA 封装便于自动贴片与紧凑电路布局，利于体积受限的电源系统。
四、典型应用
- 开关电源 (SMPS) 的高压整流与续流器件
- 功率因数校正 (PFC) 回路
- 太阳能逆变器与变频驱动的高压整流段
- 工业电源、照明电源、充电设备中高压整流与浪涌吸收
- 含感性负载的续流与钳位电路
五、使用建议与注意事项
- 连续工作时请按额定整流电流 1A 并考虑 PCB 铜箔散热与环境温度进行功率损耗与结温估算。
- 浪涌能力 Ifsm = 50A 能承受短时冲击，但不宜作为长期过载手段。
- 在高频开关应用中，结合合适的驱动布局和缓冲网络以利用快恢复特性，避免因回扫电流产生的尖峰应力。
- 贴装与焊接按 SMA 封装热路线规范进行，避免过高的回流温度或过长时间的加热，以保证器件可靠性。
- 对于静电敏感环境，按常规 ESD 防护措施处理和运输。
六、结论
STTH112A 以其 1200V 的高耐压、75ns 的快恢复特性、以及在 1A 工作点下较低的正向压降（1.9V@1A），在高压整流与中高速开关电源场景中表现均衡，尤其适合需要体积小、可靠性高且能承受瞬态浪涌的工业与能源类应用。选型时应结合实际功率、散热条件与开关频率做综合评估，以发挥器件最佳性能。
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