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FUXINSEMI DFLS2100
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI DFLS2100
- Type
- FUXINSEMI
- Minimum package
- 3000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- DFLS2100
- Electronic Component
- 1
- Package
- Power-DI-123
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.039g
- Electronic Component
- 1
- Electronic Component
- BM0227636309
- Current
- 2A
- Diode
- 1
- Current(Ir)
- 1uA@100V
- (Vf)
- 850mV@2A
- Electronic Component
- 55℃~+175℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
DFLS2100 产品概述
一、简介
DFLS2100 是富芯森美（FUXINSEMI）推出的一款功率肖特基整流二极管，适用于中功率整流与保护场景。该器件在2A工作电流下表现出较低的正向压降（Vf = 850mV @ 2A）和良好的反向耐压能力（Vr = 100V），同时具有较小的反向漏电流（Ir = 1μA @ 100V），适合对效率和热控有一定要求的电源应用。
二、主要规格
- 型号：DFLS2100
- 品牌：FUXINSEMI（富芯森美）
- 正向压降：850mV @ 2A
- 直流反向耐压：100V
- 整流电流：2A（持续）
- 反向电流：1μA @ 100V
- 非重复峰值浪涌电流（Ifsm）：50A
- 工作结温范围：-55℃ ~ +175℃
- 封装：Power-DI-123
三、特点与优势
- 低正向压降：在2A负载下Vf约850mV，能有效降低功耗并提升系统效率。
- 低漏电流：在高压条件下Ir仅1μA，利于高阻抗或待机功耗敏感的设计。
- 高浪涌能力：50A的峰值浪涌电流保证了启动或突发负载时的可靠性。
- 宽温度范围：-55℃到+175℃的结温等级适应严苛工作环境和高温场景。
- 紧凑封装：Power-DI-123封装便于PCB布线与散热处理，适合批量自动贴装。
四、典型应用
- 开关电源（整流、输出二极管）
- DC-DC转换器与降压模块的回收二极管
- 电池管理与充电器保护电路（反接保护、阻断反向放电）
- 太阳能逆变器／分布式能源系统的整流与保护
- 工业控制、汽车电子（非汽车级要求下）等中功率场景
五、封装与热管理
Power-DI-123封装提供了较好的导热路径，但在2A持续工作及高结温应用下仍需注意散热设计。建议：
- 在PCB上设计大面积铜箔散热层并通过过孔连接多层铜箔；
- 尽量缩短电流回路走线，减小寄生电阻与电感；
- 对于频繁浪涌或高环境温度场合，应进行热仿真与适当的器件热降额。
六、使用建议与注意事项
- 实际工作中请参考完整数据手册，关注最大额定值和热阻参数，进行必要的降额设计；
- 焊接时遵循厂商推荐的回流焊工艺，避免超过封装耐热限值；
- 在并联使用或热循环频繁的环境中，需考虑额外的匹配与可靠性验证；
- 若用于汽车级或更高可靠性要求的系统，请向供应商确认具体认证与等级信息。
DFLS2100 以其低压降、低漏电和高浪涌能力，在中小功率整流与保护场景中是兼顾性能与成本的实用选择。欲获取完整电气特性曲线及封装尺寸，请参阅富芯森美官方数据手册。
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