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FUXINSEMI MURA220T3G
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI MURA220T3G
- Type
- FUXINSEMI
- Minimum package
- 5000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- MURA220T3G
- Electronic Component
- 1
- Package
- SMA(DO-214AC)
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0g
- Electronic Component
- 1
- Electronic Component
- BM0230032101
- Current
- 2A
- Diode
- Electronic Component
- Current(Ir)
- 2uA@4V
- (Vf)
- 950mV@2A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MURA220T3G — 快恢复/高效率二极管 产品概述
一、产品简介
MURA220T3G 是富芯森美（FUXINSEMI）推出的独立式快恢复/高效率整流二极管，封装为 SMA (DO-214AC)。该器件在 2A 工作电流条件下具有约 0.95V 的正向压降，反向耐压达 200V，兼顾低损耗与抗瞬态能力，适合各种开关电源与整流场合。
二、主要电气参数
- 正向压降 (Vf)：0.95V @ IF = 2A
- 直流整流电流：2A
- 非重复峰值浪涌电流 (Ifsm)：40A
- 直流反向耐压 (Vr)：200V
- 反向电流 (Ir)：2μA @ VR = 4V
- 反向恢复时间 (Trr)：25ns
- 工作结温范围：-55°C ~ +150°C
三、性能亮点
- 快恢复特性（Trr = 25ns）：在高速开关环境中显著降低反向恢复引起的损耗和开关应力，有利于提高系统效率并减小电磁干扰。
- 低正向压降：0.95V@2A 的正向电压有助于降低导通损耗，适用于对效率敏感的电源设计。
- 低反向泄漏：在低电压下反向电流仅为 μA 级，利于待机功耗控制与高阻态电路应用。
- 良好浪涌能力：40A 峰值浪涌允许短时承受开机或负载突变造成的冲击电流。
四、典型应用
- 开关电源整流（离线/有隔离SMPS）
- 功率因数校正（PFC）辅助整流
- DC-DC 变换器的续流/整流二极管
- 适配器、充电器及小功率电源模块
- 通用整流与保护电路
五、封装与散热注意事项
SMA（DO-214AC）独立式封装便于手工焊接与自动贴装。由于封装体积有限，长期承载 2A 电流并在高结温下工作时需注意 PCB 散热设计：增大焊盘铜箔面积、加厚过孔或导热层，以降低结到环境的热阻并确保可靠性。同时合理限制瞬态浪涌，避免长时间接近 Ifsm 极限。
六、使用建议与可靠性
在实际设计中建议对工作电流与结温进行适当降额，以延长寿命并保证稳定性。若电路包含高 dv/dt 或高频开关环节，配合合理缓冲与抑制电路可以进一步减少反向恢复产生的寄生振荡。MURA220T3G 适合对效率、响应速度与成本有平衡要求的电源产品。
如需进一步对接脚尺寸、典型波形或温升曲线等数据，可参考厂方详细数据手册或联系富芯森美技术支持获取完整规格表。
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