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SI2301CDS 为 P 沟道场效应管(MOSFET),封装 SOT-23,工作温度范围 -55℃~+150℃。主要电气参数:漏源电压 Vdss = 20V;连续漏极电流 Id = 3A(封装极限);导通电阻 RDS(on) = 142mΩ @ VGS = 2.5V(P 沟道通常表示为 VGS = -2.5V);阈值电压 VGS(th) ≈ 0.4V;栅极总电荷 Qg = 6.6nC @4.5V;输入电容 Ciss = 500pF,反向传输电容 Crss = 80pF;耗散功率 Pd = 400mW(SOT-23 封装条件下)。
封装 Pd = 400mW 意味着热限制显著。仅按 RDS(on) 计算,若连续流经 3A 时 I^2·R ≈ 1.28W,远超 Pd,因此不能在无强冷却下长期以 3A 工作。在不加外部散热的条件下,保持封装内功耗 ≤400mW,对应的近似安全连续电流约为 sqrt(Pd/R) ≈ 1.68A(理论值,实际须考虑环境温度与PCB热阻)。设计时必须按热阻与环境降额。
选择时以实际最大工作电流、热条件与驱动电压为主。如需持续多安培输出或更低 RDS(on),应考虑更大封装或更低阻值器件。对申请替代型号时,优先匹配:P沟道、20V 等级、在目标 VGS 下的 RDS(on) 与 Qg、以及 SOT-23 封装尺寸。
以上为 SI2301CDS 的产品概述与工程使用要点,供选型与电路设计参考。若需要具体电路样例或热阻计算可提供应用环境参数以便进一步评估。
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Model text, package form, tray or reel details, and visual evidence are reviewed together before RFQ feedback.
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