WMSIC Electronic Components

FUXINSEMI SI2301CDS

ModelSI2301CDS
PackageSOT-23
BrandFUXINSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
FUXINSEMI SI2301CDS
Type
FUXINSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
FUXINSEMI
Electronic Component
SI2301CDS
Electronic Component
1
Package
SOT-23
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0226574433
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
400mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V
Capacitor(Ciss)
500pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SI2301CDS 产品概述 — FUXINSEMI(富芯森美)

一、主要参数概述

SI2301CDS 为 P 沟道场效应管(MOSFET),封装 SOT-23,工作温度范围 -55℃~+150℃。主要电气参数:漏源电压 Vdss = 20V;连续漏极电流 Id = 3A(封装极限);导通电阻 RDS(on) = 142mΩ @ VGS = 2.5V(P 沟道通常表示为 VGS = -2.5V);阈值电压 VGS(th) ≈ 0.4V;栅极总电荷 Qg = 6.6nC @4.5V;输入电容 Ciss = 500pF,反向传输电容 Crss = 80pF;耗散功率 Pd = 400mW(SOT-23 封装条件下)。

二、关键特性与优势

  • 低电压场合适用:20V 额定满足常见电源管理与电平切换需求。
  • 低门槛、逻辑级驱动:VGS(th) 低,配合 -2.5V 驱动即可达到 142mΩ 的 RDS(on),适合便携与电池供电电路。
  • 中等开关性能:Qg 6.6nC 与 500pF 的 Ciss 表明在中速开关下驱动功耗可控,适用于电源开关与倒相器件等场景。

三、功耗与热限注意

封装 Pd = 400mW 意味着热限制显著。仅按 RDS(on) 计算,若连续流经 3A 时 I^2·R ≈ 1.28W,远超 Pd,因此不能在无强冷却下长期以 3A 工作。在不加外部散热的条件下,保持封装内功耗 ≤400mW,对应的近似安全连续电流约为 sqrt(Pd/R) ≈ 1.68A(理论值,实际须考虑环境温度与PCB热阻)。设计时必须按热阻与环境降额。

四、典型应用场景

  • 便携设备的电源选择/反向保护、负载开关(低压、低功耗场合);
  • 电平转换与小电流开关;
  • 电池管理和充放电路径切换(需注意热管理与瞬态电流);
  • 需小封装、高密度布局的开关电路。

五、PCB 布局与驱动建议

  • SOT-23 封装热阻较大,建议在 PCB 底层做铜箔散热、加宽封装引脚到大面积铜箔,必要时布置通孔导热;
  • 栅极走线短且阻抗低,驱动源阻抗小以减少开关损耗;
  • 对于含有快速切换的应用,考虑 RC 缓冲或栅极电阻以抑制振铃;
  • 若用于高瞬时电流场合,增加外部散热或选用更大封装器件。

六、选型与替代建议

选择时以实际最大工作电流、热条件与驱动电压为主。如需持续多安培输出或更低 RDS(on),应考虑更大封装或更低阻值器件。对申请替代型号时,优先匹配:P沟道、20V 等级、在目标 VGS 下的 RDS(on) 与 Qg、以及 SOT-23 封装尺寸。

七、可靠性与使用注意

  • 注意最大 VGS 和抗静电保护,避免超过栅源电压击穿;
  • 高温工作时按温度系数降额;
  • 焊接时遵循 SOT-23 的回流温度曲线,避免过热损伤器件。

以上为 SI2301CDS 的产品概述与工程使用要点,供选型与电路设计参考。若需要具体电路样例或热阻计算可提供应用环境参数以便进一步评估。

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