WMSIC Electronic Components

FUXINSEMI MBRD1045T4G

ModelMBRD1045T4G
PackageTO-252
BrandFUXINSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
FUXINSEMI MBRD1045T4G
Type
FUXINSEMI
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
FUXINSEMI
Electronic Component
MBRD1045T4G
Electronic Component
1
Package
TO-252
Electronic Component
Schottky Diode
Electronic Component
0g
Electronic Component
1
Electronic Component
BM0228045248
Current
10A
Diode
1
Current(Ir)
100uA@45V
(Vf)
840mV@20A
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
2500

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MBRD1045T4G 产品概述

MBRD1045T4G 是富芯森美(FUXINSEMI)推出的一款双二极管(1对共阴极)肖特基整流器,封装为 TO-252(DPAK),面向需要低正向压降和较大整流电流的开关电源及功率管理应用。该器件在 20A 测试条件下的典型正向压降为 840mV,直流反向耐压为 45V,连续整流电流为 10A,能满足对效率和热稳定性有较高要求的中功率场景。

一、主要电气参数摘要

  • 配置:1 对共阴极(两个阳极独立,阴极并接输出)
  • 正向压降(Vf):840mV @ 20A(典型测试条件)
  • 直流反向耐压(Vr):45V
  • 连续整流电流:10A
  • 反向电流(Ir):100μA @ 45V(常温)
  • 非重复峰值浪涌电流(Ifsm):150A
  • 工作结温范围:-55℃ ~ +150℃
  • 封装:TO-252(DPAK,适合表面贴装)

二、关键特性与优势

  • 低正向压降:在大电流工况下 Vf 较低,有助于减少导通损耗,提高系统效率,尤其适合高频 DC-DC 转换器和同步整流替代场景。
  • 快速响应与低反向恢复:肖特基结构本征的快速恢复特性使其在开关场合的开关损耗和功率纹波得到抑制。
  • 良好浪涌承受能力:150A 的峰值浪涌能力,可应对启动或短时过载情形。
  • 宽温度范围与可靠性:-55℃ 至 +150℃ 的结温允许器件在苛刻环境和高温升场合长期工作。
  • TO-252 封装利于功率散热和自动化贴装,兼顾热性能与装配可靠性。

三、典型应用场景

  • 开关电源输出整流(SMPS)
  • DC-DC 降压转换器和同步整流替代
  • 车载电子的辅助电源与反向保护(注意应用电压环境,45V 额定)
  • 电池管理、充电器及电源路径隔离
  • 通信设备、电源模块和工业电源系统中的快速整流和续流保护

四、封装与散热建议

TO-252(DPAK)为表面贴装功率封装,具有良好的热流通道。为获得最佳热性能与长期可靠性,建议:

  • 在 PCB 设计中使用较宽的铜箔连接二极管引脚,并在焊盘下方或周边设置散热铜区与过孔以散热至内层/背面铜;
  • 尽量缩短高电流回路的走线长度,减小寄生电感;
  • 对峰值或脉冲电流场合,注意评估 PCB 温升,必要时以风冷或散热片增强散热。

五、使用注意事项与可靠性提示

  • 反向电流会随温度显著上升,实际应用中需考虑在高温环境下的漏电和功耗增长;
  • 优化电路布局以降低接触电阻和热阻,保证器件不超过额定结温;
  • 在脉冲或浪涌频繁的场合,注意 Ifsm 限制以及器件长期承受能力;
  • 遵循封装的焊接工艺规范(回流温度曲线)以避免焊接应力或热损伤。

六、器件选型建议

选择 MBRD1045T4G 时,应确认系统的最大反向电压不超过 45V,且连续电流在 10A 范围内为主要工作条件;若系统存在更高耐压或更低 Vf 的需求,可考虑更高 Vr 或更低 Vf 的替代型号。同时对热管理不足的设计,应优先评估额外散热措施或封装级别更高的器件。

如需样片、详细数据手册(包括典型特性曲线、绝对最大额定值、引脚排列和封装尺寸)、测试数据或量产报价,可联系 FUXINSEMI 官方或授权经销商获取完整资料与支持。

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