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FUXINSEMI MURA120T3G
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI MURA120T3G
- Type
- FUXINSEMI
- Minimum package
- 5000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- MURA120T3G
- Electronic Component
- 1
- Package
- SMA(DO-214AC)
- Electronic Component
- General Purpose Diode
- Electronic Component
- 0g
- Electronic Component
- 1
- Electronic Component
- BM0230032099
- Current
- 1A
- Diode
- Electronic Component
- Current(Ir)
- 2uA@200V
- (Vf)
- 875mV@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MURA120T3G 产品概述
一、型号与概述
MURA120T3G 是一款独立式快恢复/高效率整流二极管，由 FUXINSEMI(富芯森美) 推出，封装为 SMA (DO-214AC)。该器件设计用于中高压整流与开关电源回流保护场合，兼顾低正向压降与较短反向恢复时间，适合对效率和开关损耗有要求的电源设计。
二、电气参数要点
- 正向压降 (Vf)：875mV @ 1A
- 直流反向耐压 (Vr)：200V
- 额定整流电流：1A（连续）
- 反向漏电流 (Ir)：2µA @ 200V
- 反向恢复时间 (Trr)：25ns
- 非重复峰值浪涌电流 (Ifsm)：40A
- 工作结温范围：-55℃ 至 +150℃
三、主要特性与优势
- 低正向压降（0.875V @1A）可降低导通损耗，提高整流效率，适合降压及桥式整流应用。
- 25ns 的快速反向恢复时间有利于降低开关损耗和电磁干扰（EMI），适配高频开关拓扑。
- 低反向漏电流保证在高压下的静态损耗低，利于待机功耗控制。
- SMA 封装兼顾体积与散热能力，便于自动贴装与批量生产。
四、典型应用场景
- 开关电源（SMPS）整流与回收二极管
- 伺服、电机驱动中的自由轮恢复路径
- 适配器与充电器的输出整流
- 中小功率逆变器与功率因数校正电路（PFC）局部使用
五、封装与热管理
SMA (DO-214AC) 封装适用于自动化贴装，但由于正向损耗与环境温度影响，建议在 PCB 设计中保留适当散热铜箔面积。在连续 1A 工作或高频脉冲条件下，应评估结温并进行必要的热沉或散热布局，以避免长期高结温影响可靠性。
六、使用建议与注意事项
- 在高频开关场合，注意反向恢复产生的电压尖峰，必要时并联适当的 RC 抑制网络或压敏元件以抑制过冲。
- 选型时对峰值浪涌 Ifsm（40A）进行脉冲幅值与重复率评估，避免超出峰值能量承受限值。
- 高温环境下需考虑正向压降随温度变化带来的损耗变化，推荐按最高工作结温进行耐受性验证。
- 严格控制焊接曲线，避免过热超过器件规定的热极限。
七、可靠性与测验建议
建议进行恒温老化、温度循环与浪涌冲击测试以验证长期稳定性；在批量使用前进行样品的电特性抽检（Vf、Ir、Trr）以确认一致性。针对关键应用，可与供应商确认焊接与存储规范以延长器件寿命。
总结：MURA120T3G 在中高压、1A 级别的整流应用中提供了较低的正向压降与较快的反向恢复特性，是寻求效率与开关性能平衡的可靠选择。
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