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Model text, package form, tray or reel details, and visual evidence are reviewed together before RFQ feedback.
FUXINSEMI MBRS3200T3G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI MBRS3200T3G
- Type
- FUXINSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- MBRS3200T3G
- Electronic Component
- 1
- Package
- SMB(DO-214AA)
- Electronic Component
- Schottky Diode
- Electronic Component
- 0g
- Electronic Component
- 1
- Electronic Component
- BM0230032094
- Current
- 3A
- Diode
- Electronic Component
- Current(Ir)
- 1mA@200V
- (Vf)
- 840mV@3A
- Electronic Component
- 65℃~+175℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MBRS3200T3G 产品概述
一、产品简介
MBRS3200T3G 是富芯森美（FUXINSEMI）出品的独立式肖特基整流二极管，封装为 SMB (DO-214AA)。其典型正向压降为 0.84V @ 3A，直流反向耐压 200V，额定整流电流 3A，峰值非重复浪涌电流 Ifsm 可达 100A，工作结温范围宽 (-65℃ 至 +175℃)，适合中功率、高效率整流与保护场合。
二、关键电气参数
- 正向压降 Vf：840mV @ If = 3A
- 反向耐压 Vr：200V
- 额定整流电流：3A（直流）
- 反向漏电流 Ir：1mA @ 200V
- 峰值非重复浪涌电流 Ifsm：100A（单次脉冲）
- 工作结温：-65℃ ~ +175℃
三、主要特性与优势
- 肖特基结构带来较低的正向压降与极快的恢复速度，有利于降低整流损耗与开关损耗。
- 宽温区设计与高浪涌能力，适合工业级、汽车电子与电源管理等环境。
- SMB 封装兼顾散热与焊接可靠性，适用于手工焊接与回流工艺。
四、典型应用场景
- 开关电源输出整流（SMPS）
- 电池充放电保护与续航管理
- 逆变器与电机驱动中的自由轮整流
- 车载电源与车载充电器（需注意汽车相关认证与温升）
- 快速恢复与极低损耗要求的整流回路
五、使用建议与注意事项
- 由于反向漏电在高温与高Vr下会上升，长时间在高电压下工作应注意热设计与选型裕量。
- 峰值浪涌能力强，但并不等同于重复脉冲，应评估实际浪涌次数与波形。
- 若并联使用，应确保电流均流机制（如并联电阻或匹配元件），一般不推荐并联以提升单通道电流。
- PCB 布局应优化热路径：增加焊盘面积与散热铜箔、保持短且粗的走线以降低寄生电阻和损耗。
六、封装与采购信息
- 封装：SMB (DO-214AA)；便于自动贴装与手工焊接。
- 品牌：FUXINSEMI（富芯森美）。
- 选型时建议参考厂家完整数据手册，确认封装尺寸、电气极限和热阻参数，以满足目标应用的可靠性与寿命要求。
如需参考 PCB 焊盘推荐尺寸、典型 V–I 曲线或更详细的热阻/等效电路模型，可提供具体设计目标（工作电流、环境温度、散热条件），以便给出更精确的实施建议。
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