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FUXINSEMI BZT52C5V6
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI BZT52C5V6
- Type
- FUXINSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- BZT52C5V6
- Electronic Component
- 1
- Package
- SOD-123
- Electronic Component
- Zener Diode
- Electronic Component
- 0.033g
- Electronic Component
- 1
- (Zzk)
- 400Ω
- (Zzt)
- 40Ω
- Electronic Component
- BM0264480211
- Diode
- 1
- Current(Ir)
- 1uA
- Power Dissipation(Pd)
- 500mW
- Electronic Component
- 5.2V~6V
- Electronic Component
- 55℃~+150℃
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BZT52C5V6 稳压二极管产品概述
一、产品简介
BZT52C5V6 是一款由 FUXINSEMI（富芯森美）提供的独立式稳压二极管，封装为 SOD-123，适用于小功率、低电流的参考和保护场合。标称稳压值围绕 5.6V（规格范围 5.2V~6.0V），拥有低反向泄漏和良好的温度适应性，便于在消费电子、通信和工业控制等系统中做简洁的电压钳位与基准应用。
二、主要电气参数
- 稳压值（标称）：5.6V（规格范围 5.2V~6.0V）
- 反向电流 Ir：1μA（条件示例：2V 时为 1μA，实际随电压/温度变化）
- 阻抗 Zzt：约 40Ω（在规定测试电流下的动态阻抗）
- 阻抗 Zzk：约 400Ω（在击穿转折区或低电流区的阻抗特征）
- 最大耗散功率 Pd：500mW（封装热限制，设计时应考虑降额）
- 工作结温：-55℃ ~ +150℃
三、封装与热管理
SOD-123 小型封装利于表面贴装与紧凑设计，但热阻相对较大，因此 500mW 的耗散为器件在理想散热条件下的参考值。实际应用中建议给予适当散热路径或在高温/连续工作时进行功率降额，以保证结温不超过额定上限。
四、典型应用与特性注意点
- 适合用作低功耗系统的电压基准、基线钳位或保护元件。
- 由于 Zzt ≈ 40Ω，稳压精度/纹波抑制能力受限，不宜用于要求高精度的参考场合。
- 反向泄漏低（μA 级），适合电池供电和待机电路。
- 在脉冲或过压冲击场合，应注意能量吸收能力有限，必要时配合串联电阻或其它保护器件使用。
五、选型与可靠性建议
选择时以实际稳压点、最大工作电流和散热条件为准。长期可靠性考量应包括环境温度、最大结温控制和重复过压应力测试。若需更低阻抗或更高功耗，请考虑更高功率或不同封装的稳压器件。
型号：BZT52C5V6；品牌：FUXINSEMI（富芯森美）；封装：SOD-123。该器件适合用于对成本、尺寸和功耗有严格限制，但对稳压精度要求适中的通用电子产品设计。
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