WMSIC Electronic Components

FUXINSEMI BC807-25 BC807

ModelBC807-25
PackageSOT-23
BrandFUXINSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
FUXINSEMI BC807-25
Type
FUXINSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
FUXINSEMI
Electronic Component
BC807-25
Electronic Component
1
Package
SOT-23
Electronic Component
1 PNP
Electronic Component
Transistor(BJT)
Electronic Component
0.032g
Electronic Component
1
Electronic Component
BM0265133010
Operating Temperature
55℃~+150℃
Transistor Type
PNP
Frequency(f T)
100MHz
Power Dissipation(Pd)
300mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BC807-25 产品概述

一、产品简介

BC807-25 是由 FUXINSEMI(富芯森美)推出的一款高增益 PNP 小信号晶体管,采用 SOT-23 小封装,设计用于低功耗开关与小信号放大场合。器件在集电极电流可达 500mA 的条件下,提供高达 600 的直流电流增益(hFE),适合对驱动电流要求较低的应用场景。

二、主要参数概览

  • 晶体管类型:PNP
  • 最大集电极电流 Ic:500 mA
  • 集射极击穿电压 Vceo:45 V
  • 耗散功率 Pd:300 mW(SOT-23 封装,注意散热限制)
  • 直流电流增益 hFE:600(典型)
  • 特征频率 fT:100 MHz
  • 集电极截止电流 Icbo:100 nA(典型)
  • 集射极饱和电压 VCE(sat):700 mV(典型)
  • 射基极击穿电压 Vebo:5 V
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 封装:SOT-23
    (具体电气特性请以产品数据手册为准)

三、性能亮点与设计要点

  1. 高增益:hFE 高达 600,有利于在基极驱动电流受限的场合实现大电流放大,但在高 hFE 下需注意偏置稳定性和温漂。
  2. 宽频率响应:100 MHz 的 fT 使其在高频小信号放大、去耦与缓冲电路中表现良好。
  3. 低漏电流:Icbo 仅 100 nA,适合低功耗与高阻抗输入电路。
  4. 电力与散热限制:SOT-23 封装的 Pd 为 300 mW,工作时需考虑 PCB 铜箔散热或限流设计,避免长期大电流导致过热或失效。
  5. 饱和压:在大电流开关时 VCE(sat) 约 700 mV,应在功率预算中考虑该压降造成的热耗散。

四、典型应用

  • 小信号放大器(音频前级、信号缓冲)
  • 高侧开关与电源管理(与 NPN 互补使用)
  • 开关驱动与逻辑接口(需注意饱和与恢复特性)
  • 射频前端低功耗放大(受限于功率与线性度需求)
  • 便携式与电池供电设备中需要高增益、低漏电的场合

五、封装与布局建议

BC807-25 以 SOT-23 小封装提供,适合自动贴装生产。由于 Pd 受限,推荐在 PCB 设计时:

  • 在晶体管引脚周围增加铜箔面积以增强散热;
  • 对于长时间工作在高 Ic 条件下,采用更大的散热铜箔或并行分担电流的方案;
  • 在基极引入适当的偏置电阻及旁路电容以稳定工作点并抑制振荡,避免在高 hFE 下出现寄生振荡。

六、可靠性与存储

器件工作温度范围为 -55 ℃ 到 +150 ℃,适应工业级环境。储存与回流焊接时请遵守湿敏等级(MSL)与焊接温度曲线要求,以防器件受潮或热应力损伤。长时间暴露在超出额定极限(电压、电流、温度)下会降低器件寿命。

七、选型与替代

BC807-25 在需要高增益与中等电压等级(45 V)时为合适选择。替代时请匹配关键参数:PNP 类型、Vceo ≈45 V、Ic ≥500 mA、Pd 与封装相近,并关注 hFE、fT 与 Icbo 等参数以确保电路性能一致。有关引脚定义与完整电气特性,请参考 FUXINSEMI 提供的正式数据手册与封装图。

如需样片、参数曲线(常温/高温下的 hFE、VCE(sat)、频率响应)或参考电路设计,我可以进一步提供电路示意与仿真建议。

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