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FUXINSEMI BSS123
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI BSS123
- Type
- FUXINSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- BSS123
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Electronic Component
- BM0264480220
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 100V
- Capacitor(Ciss)
- 15pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BSS123 产品概述
一、主要特点
BSS123 为单只 N 沟道增强型场效应管（MOSFET），基于提供的参数摘要，该器件适用于低功率、高耐压的开关与放大场合。器件关键指标如下：最大漏源电压 Vdss = 100V；连续漏极电流 Id = 200mA；导通电阻 RDS(on) = 3Ω（Vgs = 10V）；耗散功率 Pd = 350mW；栅极阈值电压 Vgs(th) = 2.5V。栅极总电荷 Qg = 1.8nC（10V），输入电容 Ciss = 15pF，反向传输电容 Crss = 5pF；工作温度范围 -55℃ ~ +150℃。封装为 SOT-23，品牌标识 FUXINSEMI（富芯森美）。
二、性能解读
- 高耐压：100V 的 Vdss 使其能在中高电压开关场合工作，如小功率电源、防反接保护或高压感测电路。
- 低功耗小电流应用：Id 为 200mA，RDS(on) 3Ω 表明在较大电流条件下导通损耗较高，不宜用作高电流功率开关，适合驱动小型负载或作为信号开关。
- 开关特性：Qg 1.8nC 及 Ciss/Crss 值偏小，意味着在 PWM 或快速开关时驱动电容负担小，适合低能量门极驱动场合。
三、封装与热管理
SOT-23 小封装便于表面贴装与紧凑布局，但散热能力有限。器件 Pd = 350mW，在持续工作时需注意环境温度与 PCB 散热设计。建议：
- 在长时间通电或靠近热源时增加散热铜箔或热过孔；
- 评估在最大工作电流下的 I^2·R 导通损耗与总耗散是否低于 Pd；
- 避免在接近最高结温的环境长期运行。
四、典型应用场景
- 小电流高压开关（如电池管理中的 MOSFET 开断）
- 反向保护与过压防护电路
- 小信号放大与电平转换
- 低功耗驱动电路、便携设备的次级开关元件
五、选型与使用建议
- 若需承载较大电流或更低导通损耗，应选择更低 RDS(on) 与更高 Pd 的功率 MOSFET；
- 工作时注意栅极驱动电压：RDS(on) 数据以 Vgs = 10V 给出，若使用较低门极电压（如 5V、3.3V），请参考实际 Vgs 下的 RDS(on) 曲线以评估导通性能；
- 在高频开关应用中，尽管 Qg 与 Ciss 较小有利于速度，但仍需优化驱动器以避免振铃与过冲；
- 查看制造商完整数据手册以确认最大 Vgs、极限值及温度特性。
六、结论
该型号以高耐压与小尺寸为主要优势，适合中高压低功率场景与小电流开关应用。设计时需结合实际电流、工作电压与热条件，合理布局与驱动，以发挥器件可靠性与稳定性。若需替代或批量采购，建议对比完整参数表并与供应商确认长期可用性与质量认证。
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