WMSIC Electronic Components

FUXINSEMI FSJEB05D3

ModelFSJEB05D3
PackageSOD-323
BrandFUXINSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
FUXINSEMI FSJEB05D3
Type
FUXINSEMI
Minimum package
3000 卷

Technical parameters

Electronic Component
FUXINSEMI
Electronic Component
FSJEB05D3
Electronic Component
1
Package
SOD-323
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.03g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
60pF
Electronic Component
BM0264480231
Operating Temperature
55℃~+125℃
Voltage
15V
Electronic Component
IEC 61000-4-4;IEC 61000-4-2
Current(Ir)
10uA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

FSJEB05D3 产品概述

一、产品简介

FSJEB05D3 是 FUXINSEMI(富芯森美)推出的一款单路双向瞬态电压抑制二极管(TVS),专为保护 5V 级别的 I/O 线及敏感接口而设计。器件采用 SOD-323 小封装,支持高强度电磁兼容抗扰能力,适用于手机、配件、PDA 等便携电子设备的静电与脉冲干扰防护。

二、主要特性

  • 双向保护,适合双向数据或电源信号线。
  • 低工作电压 Vrwm = 5V,适配常见 5V 接口。
  • 低钳位电压 Vclamp ≈ 15V,能在瞬态能量注入时有效限制电压峰值。
  • 峰值脉冲电流 Ipp = 30A,峰值脉冲功率 Ppp = 450W(瞬态条件)。
  • 击穿电压 VBR = 8V,反向漏电流 Ir ≤ 10 μA(在 Vrwm 下)。
  • 结电容 Cj = 60 pF,需考虑对高速信号的影响。
  • 工作温度范围 -55 ℃ 至 +125 ℃。
  • 符合 RoHS 要求;抗扰度等级满足 IEC 61000-4-2(ESD)和 IEC 61000-4-4(EFT)。

三、电磁兼容能力

  • IEC 61000-4-2(ESD):空气放电 ±30 kV、接触放电 ±30 kV。
  • IEC 61000-4-4(EFT):脉冲电流 40 A(5/50 ns)。
    以上指标表明器件可在典型移动终端使用场景下为接口提供可靠的静电与脉冲抗扰保护。

四、电气性能要点

  • 适配 5V 工况的双向抑制,正常工作下漏电小(Ir ≤ 10 μA),不会明显增加待机功耗。
  • 钳位电压约 15V,可在短时高能脉冲中保护后端电路;但非长期限流器,长时间过流仍需外加保护。
  • 结电容 60 pF 对高速数据线(USB、HDMI 等)会有影响,建议在高速差分线或对时序敏感的接口评估后使用。

五、典型应用场景

  • 手机与其外设(耳机、充电、数据口)接口防护。
  • 个人数字助理(PDA)、便携式终端的 I/O 线静电保护。
  • 小型通信模块、传感器接口及其他需 5V 双向保护的场合。

六、封装与安装建议

  • 封装:SOD-323,适合自动贴装与回流焊工艺。
  • 布局建议:尽量靠近被保护的接口或插座放置,最短保护走线以降低感抗;器件的接地应有足够的回流层或大地铜箔与多过孔,快速分散 ESD 能量。
  • 对高速信号,若结电容影响不可接受,可选用低容型 TVS 或将 TVS 放在非敏感点并配合滤波措施。

七、可靠性与使用注意

  • TVS 为瞬态能量吸收元件,不适合长期承受大功率。设计时应评估脉冲能量与器件额定 Ppp、Ipp 的匹配。
  • 回流焊曲线与制造工艺需遵循封装耐温规范;在高温回流下注意器件机械与电气性能稳定性。
  • 长期工作在高温或高泄漏条件下需关注漏电与老化特性,建议在产品验证阶段做系统级 ESD 与 EFT 测试。

八、选型提示

  • 若对信号完整性要求高,优先考虑更低结电容的 TVS;若对更强瞬态能力有需求,可选择更高 Ipp/Ppp 等级的器件或并联方案。
  • 确认钳位电压与后端最大耐受电压匹配,避免 TVS 钳位后仍导致系统损伤。

如需器件详细尺寸图、封装规范或样片采购信息,请依据型号 FSJEB05D3 向 FUXINSEMI 提供商或分销渠道咨询获取完整的数据手册与样品。

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