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FUXINSEMI KMB110F
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI KMB110F
- Type
- FUXINSEMI
- Minimum package
- 5000 卷
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- KMB110F
- Electronic Component
- 1
- Package
- MBS
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.145g
- Electronic Component
- 1
- Electronic Component
- BM0257218667
- Current
- 1A
- Current(Ir)
- 200uA@100V
- (Vf)
- 920mV@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage Rating(Vr)
- 100V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
KMB110F 产品概述
一、产品简介
KMB110F 是富芯森美（FUXINSEMI）推出的一款肖特基整流二极管，定位为中等电压、小电流的开关 / 整流应用元件。该器件具有低正向压降、较小的反向漏电和良好的浪涌承受能力，适合用于电源整流、二极管保护以及开关电路中作为快速恢复或自由轮回二极管使用。
二、主要参数
- 正向压降 (Vf)：0.92 V @ 1 A
- 直流反向耐压 (Vr)：100 V
- 整流电流 (Io)：1 A（连续）
- 反向电流 (Ir)：200 μA @ 100 V（常温标称）
- 非重复峰值浪涌电流 (Ifsm)：30 A（单次脉冲）
- 工作结温范围：-55 ℃ 至 +150 ℃
- 品牌：FUXINSEMI（富芯森美）
- 封装：MBS
三、产品特性
- 低正向压降：在 1 A 条件下 Vf ≈ 0.92 V，可降低整流损耗与发热，适合效率敏感的电源设计。
- 低反向恢复：肖特基结构天然具有非常快的恢复特性，适合高频开关场合。
- 较低漏电：在 100 V 下 Ir ≈ 200 μA（室温），但应注意随温度上升漏电显著增加。
- 良好浪涌承受力：单次峰值 30 A，可应对启动或短时浪涌，但不代表可连续承受。
四、典型应用
- 开关电源和适配器的次级整流
- 电池充放电路径保护与肖特基 OR-ing
- 低压直流电源整流与旁路元件
- 快速整流、反向保护与自由轮回二极管（开关管驱动）
五、封装与热管理
MBS 封装提供标准的底板焊接形式，需参照厂方封装图纸确定焊盘尺寸与热沉方式。虽然器件额定连续电流为 1 A，但实际使用时应关注结温上升与环境散热条件，必要时通过 PCB 铜箔散热或金属散热片降低结温以延长寿命并控制漏电。
六、设计与使用建议
- 反向漏电与温度相关：高温下 Ir 会增加，设计时应考虑漏电对待机功耗的影响。
- 浪涌处理：Ifsm = 30 A 仅限非重复脉冲，避免在工况中频繁接近该值。
- 布局建议：走线短且粗，减小寄生电感；靠近开关管或整流点放置以减小 EMI。
- 备用验证：在关键应用中对实际环境温度与负载进行热仿真与实测，按需进行电流、功耗降额设计。
- 选型比较：若需更低漏电或更高电压等级，建议查询同厂或其他厂商的更高规格肖特基或超结二极管。
总结：KMB110F 提供了在 100 V 档位下兼顾低 Vf 与快恢复的实用肖特基方案，适合一般整流与保护用途。选型时应综合考虑温度、散热与浪涌要求，确保长期可靠运行。若需完整电气、机械参数及焊接说明，请参考厂家完整数据手册。
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