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FUXINSEMI B5819WT
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI B5819WT
- Type
- FUXINSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- B5819WT
- Electronic Component
- 1
- Package
- SOD-523
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.025g
- Electronic Component
- 1
- Electronic Component
- BM0264480225
- Current
- 350mA
- Diode
- Electronic Component
- Current(Ir)
- 5uA@30V
- (Vf)
- 600mV@200mA
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage Rating(Vr)
- 40V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
B5819WT 产品概述
一、产品简介
B5819WT 是富芯森美（FUXINSEMI）推出的一款独立式肖特基二极管，采用超小型 SOD-523 封装，针对低压、低功耗场景进行了优化。该器件正向压降低（Vf = 600mV @ 200mA），反向耐压达 40V，适合移动终端、便携设备与信号线保护等需要低压降整流或极性保护的应用。
二、主要电气参数
- 正向压降：600 mV @ 200 mA（典型测试点，实际值随电流与温度变化）
- 直流反向耐压（Vr）：40 V
- 最大整流电流（If）：350 mA（连续工作极限）
- 反向电流（Ir）：5 μA @ 30 V（室温标称）
- 非重复峰值浪涌电流（Ifsm）：2 A（单次脉冲能力）
- 封装：SOD-523，独立式贴片元件
三、主要特性与优势
- 低正向压降：在低电流条件下可显著减少功耗与热量，提升电源效率。
- 低反向漏电：30V 条件下仅 5 μA，有利于待机与低功耗系统保持低漏电损耗。
- 小型封装：SOD-523 占板面积小，便于高密度 PCB 布局与便携产品应用。
- 快速恢复/肖特基特性：适合快速开关和高频整流场合。
四、典型应用场景
- USB/数据线电源极性保护与反接保护
- 低压差整流（例如便携充电模块、背光供电）
- 下降压/升压模块的输出取样与二次整流
- 信号线路保护、钳位与次级防反向电流
- 低功耗与便携式电子产品
五、设计与使用建议
- 工作电流与发热：SOD-523 封装散热能力有限。虽然器件额定整流电流为 350 mA，但长期工作建议优先在 200 mA 以下使用以降低 Vf、减小温升并延长可靠性。
- 浪涌与保护：Ifsm 为 2 A（非重复峰值），仅适用于短时浪涌。若电路可能承受较大冲击电流，应在输入端配置限流或使用更大封装的保护器件。
- 反向漏流随温度增加显著上升，关键待机与高温场合应在热分析中考虑漏电带来的影响并适当降额。
- PCB 布局：为改善散热，SOD-523 周围可留适当铜皮并保证良好焊盘，避免热集中。采用回流焊工艺时遵循厂方焊接曲线以保障焊接可靠性。
- 并联使用：由于封装与散热限制，不推荐通过并联多个此型号器件以提升电流，若须更高电流应选用额定更高封装元件。
六、注意事项与验证
- 在最终应用中，请参考厂家完整数据手册进行温度特性、最大结温、热阻等参数校核。
- 对关键产品进行样机测试，验证在目标环境（尤其高温、高脉冲）下的电流、压降与漏电表现。
- 采购与替换时确认型号与批次，以避免与其他同名但参数不同的器件混淆。
总结：B5819WT（FUXINSEMI，SOD-523）以其低正向压降、较低漏电和小尺寸封装，适用于低电压、低功耗和空间受限的整流与保护场合。但受限于小封装的散热与电流能力，设计时应合理降额并做好热管理与浪涌保护。若需更高电流或更强抗浪涌能力，可考虑选择更大封装或并行保护方案。
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