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FUXINSEMI DSK36
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI DSK36
- Type
- FUXINSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- DSK36
- Electronic Component
- 1
- Package
- SOD-123
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.037g
- Electronic Component
- 1
- Electronic Component
- BM0264480243
- Current
- 3A
- Diode
- 1
- Current(Ir)
- 100uA@60V
- (Vf)
- 850mV@3A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
DSK36 肖特基二极管（FUXINSEMI）产品概述
一 产品简介
DSK36 是富芯森美（FUXINSEMI）推出的一款高可靠性肖特基整流二极管，采用 SOD-123 封装，面向中等功率整流与保护应用。器件在 3A 连续整流电流条件下具有较低的正向压降和良好的浪涌承受能力，适合开关电源、降压转换器、续流回路及整流桥等场合。
二 主要参数
- 型号：DSK36
- 封装：SOD-123（独立式）
- 正向压降（Vf）：0.85V @ IF = 3A
- 直流反向耐压（Vr）：60V
- 连续整流电流：3A
- 非重复峰值浪涌电流（Ifsm）：60A
- 反向电流（Ir）：典型 500nA（室温条件）；最大值可达 100µA @ 60V（高温或极限测量条件）
- 工作结温范围：-55℃ ~ +150℃
- 描述：肖特基二极管，60V，低反向泄漏，SOD-123
三 主要特性与优势
- 低正向压降：在大电流条件下 Vf≈0.85V，有助于降低导通损耗，提高整流效率。
- 快速响应与低反向恢复：肖特基结构本征无载流子积累，适用于开关频率较高的电源设计。
- 良好浪涌能力：60A 的非重复峰值浪涌电流可应对启动或短时突发电流冲击。
- 宽温度范围：-55℃~+150℃ 的结温适应工业级工作环境。
- 小型封装：SOD-123 占板面积小，便于密集布局与自动化贴片。
四 典型应用场景
- 开关电源（SMPS）次级整流与同步整流辅件
- 降压/升压转换器的续流二极管
- 电池保护与反接保护电路
- 电源入口的反向电压保护与浪涌吸收
- 汽车电子、工业控制及通信设备中的整流/保护
五 封装与热管理建议
SOD-123 为小型表贴封装，散热依赖于焊盘与铜铜箔面积。设计时建议：
- 在 PCB 走宽的铜箔上增加散热引出线和热沉区域；
- 对于连续 3A 级别应用，应评估结到环境的热阻并进行适度降额；
- 保持焊盘与器件的良好热接触，避免长期运行在高结温下以抑制反向泄漏上升。
六 选型与使用注意事项
- 反向漏电随温度迅速上升，若工作环境温度偏高或存在长期高压偏置，请参考典型与最大 Ir，并留有裕量；
- 若对导通损耗有更高要求，可对比更低 Vf 的肖特基或同步 MOSFET 方案；
- 在浪涌或重复冲击场合，考虑浪涌能量与 Ifsm 限制，必要时并联或选择大封装器件；
- 焊接时遵循 SOD-123 的回流温度曲线，避免超温影响可靠性。
DSK36 在中等功率整流与保护应用中提供了平衡的电气性能与体积优势，是多种电源管理场景的实用选择。若需更详细的电气特性曲线、封装尺寸或热阻参数，请参考厂商数据手册或联系富芯森美技术支持。
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