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FUXINSEMI MRA4007T3G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI MRA4007T3G
- Type
- FUXINSEMI
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- MRA4007T3G
- Electronic Component
- 1
- Package
- SMA(DO-214AC)
- Electronic Component
- General Purpose Diode
- Electronic Component
- 0g
- Electronic Component
- 1
- Electronic Component
- General Purpose Diode
- Electronic Component
- BM0264480229
- Current
- 2A
- Diode
- Electronic Component
- Current(Ir)
- 5uA@1000V
- (Vf)
- 1.18V@2A
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MRA4007T3G 产品概述
一、产品简介
MRA4007T3G 是 FUXINSEMI（富芯森美）出品的一款独立式通用整流二极管，封装为 SMA（DO-214AC）。器件针对高耐压与中等整流电流场合设计，适用于需要长电压耐受能力与可靠整流性能的电源和保护电路。
二、主要电气参数
- 直流反向耐压（Vr）：1000 V（1 kV），适合高压回路和阻断工况；
- 额定整流电流：2 A（连续直流），用于中等功率整流应用；
- 正向压降（Vf）：1.18 V @ 2 A，说明在额定电流下有一定的导通损耗；
- 反向电流（Ir）：5 μA @ 1000 V，漏电小，有利于降低高压下的静态损耗与误动作。
三、封装与热管理
SMA（DO-214AC）封装提供紧凑且便于自动贴装的外形。以 Vf=1.18 V、I=2 A 计算，器件导通时功耗约为 P ≈ 2.36 W，实际工作中需考虑脉冲、环境温度及散热条件。建议在 PCB 设计时：
- 保留充足的铜箔散热面积并通过热铜垫或散热铜柱加强散热；
- 对于长时间高电流或高环境温度工况，应采用降额使用或外加散热措施；
- 注意反向漏电随温度上升而增加，布局上避免靠近敏感低压信号。
四、典型应用场景
- 高压整流电源、桥式整流模块；
- 工业控制与电源逆变器高压回路；
- 充电设备与功率转换器中的保护与整流元件；
- 需要高耐压且漏电小的测量/检流电路保护。
五、选型建议与注意事项
- 若工作环境温度较高或短时冲击电流较大，应参考厂商完整数据手册评估脉冲峰值电流及热阻参数；
- 在高压场合注意爬电距离与绝缘设计，确保板上及封装间隙满足安全规范；
- 反向电流虽小，但在超高阻抗或高精度测量电路中仍可能影响，需要评估；
- 焊接与回流工艺请参照厂商推荐曲线以保证器件可靠性。
六、封装与采购信息
型号：MRA4007T3G；品牌：FUXINSEMI（富芯森美）；封装：SMA（DO-214AC）；分类：通用二极管 / 独立式整流二极管。具体订购数量、包装方式及可用性请向供应商或代理商咨询，并参照最新数据手册获取完整电气与环境规范。
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