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FUXINSEMI SS56B
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI SS56B
- Type
- FUXINSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- SS56B
- Electronic Component
- 1
- Package
- SMB(DO-214AA)
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.19g
- Electronic Component
- 1
- Electronic Component
- BM0264480237
- Current
- 5A
- Diode
- Electronic Component
- Current(Ir)
- 100uA@60V
- (Vf)
- 700mV@5A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SS56B（FUXINSEMI）产品概述
一、概述
SS56B 是富芯森美（FUXINSEMI）推出的一款独立式肖特基整流二极管，封装为 SMB（DO-214AA）。该器件针对中大电流整流与开关电源应用进行优化，具有低正向压降与较高的冲击耐受能力，适合要求效率与可靠性的功率管理场合。
二、主要参数
- 封装：SMB（DO-214AA），独立式贴片封装
- 额定直流整流电流（IF）：5A
- 反向耐压（VR）：60V
- 正向压降（Vf）：0.7V @ 5A
- 非重复峰值浪涌电流（IFSM）：150A
- 反向电流（IR）：100μA @ 60V
- 工作结温范围：-55℃ ~ +150℃
三、产品特点
- 肖特基结构带来较低的正向压降，5A 工作点 Vf≈0.7V，有助于降低导通损耗与散热需求。
- 高冲击电流能力（IFSM=150A），适用于瞬态浪涌与启动冲击场合。
- 在60V 反向电压下反向泄漏电流可控（100μA），利于提高系统待机效率。
- SMB 封装兼顾功率处理与板级可靠性，适用于常见的贴片工艺。
四、典型应用
- 开关电源整流与续流二极管（同步替代或非同步整流）
- 电源管理与DC-DC/AC-DC 转换器输出整流
- 电池充放电保护、逆向极性保护电路
- 汽车与工业电源中的瞬态抑制及整流场合（注意温度与抗浪涌要求）
五、封装与热管理建议
SMB（DO-214AA）为表面贴装封装，推荐采用标准回流焊工艺。尽管肖特基正向压降较低，但在5A 连续工作时仍会产生显著热量，建议：
- 在版图上增大焊盘与散热铜箔，必要时增加底部或旁边的热过孔以导热到大面积地线/散热层；
- 评估最高结温（≤150℃）与元器件周边温升，设计时预留热裕量；
- 对于有频繁浪涌的应用，验证IFSM 能力及周边防护。
六、设计与使用要点
- 在高频开关应用中，肖特基的低恢复特性可降低开关损耗，但仍需关注电磁干扰与布局走线，以减少寄生感抗带来的振铃。
- 反向电流随温度上升明显增加，系统待机或高温工况下应评估漏电对功耗的影响。
- 若需更高电压等级或更低反向泄漏，可考虑规格更高或不同材料的替代型号。
七、采购与替代
型号：SS56B；品牌：FUXINSEMI（富芯森美）；封装：SMB。选型时可参照相同封装与电气参数的通用 SS56 系列产品作为替代，具体性能差异请以厂商完整数据表为准。
总结：SS56B 以其 5A 连续电流能力、0.7V@5A 的较低正向压降和 150A 的峰值浪涌能力，在中功率整流和保护场景中具有良好的性价比与可靠性。设计时重视散热布局与高温条件下的反向电流影响，可获得稳定的长期性能表现。
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