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FUXINSEMI AO3400A
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI AO3400A
- Type
- FUXINSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- AO3400A
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0228045250
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.2W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 630pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AO3400A 产品概述
一、基本参数
AO3400A 为 FUXINSEMI（富芯森美）提供的一款 SOT-23 封装 N 沟增强型场效应管，适合低压小功率开关应用。主要电气参数如下：
- 漏-源耐压 Vdss：30V
- 连续漏极电流 Id：5.8A（封装与散热限制条件下）
- 导通电阻 RDS(on)：52mΩ @ Vgs=2.5V、Id=4A
- 阈值电压 Vgs(th)：约 0.7V
- 总栅极电荷 Qg：17.5nC
- 输入电容 Ciss：630pF @ 15V；反向传输电容 Crss：70pF @ 15V
- 功耗 Pd（封装极限）：1.2W（实际板级散热需按 PCB 设计和环境温度考虑）
- 工作温度范围：-55℃ ~ +150℃
- 封装：SOT-23，数量：1 只（N 沟道）
二、主要特性与优势
- 低导通电阻：在 2.5V 驱动下 RDS(on) 仅 52mΩ，适合 3.3V 或更高电平的直接驱动，降低导通损耗。
- 体积小、封装常见：SOT-23 便于高密度 PCB 布局，适合移动设备与便携电源。
- 中等栅极电荷与中等输入电容：Qg=17.5nC、Ciss=630pF，开关速度适中，便于 PWM 控制时在效率与 EMI 之间取得平衡。
- 宽温度范围：适合工业级温度要求的应用场景。
三、典型应用
- 便携式设备的电源管理与电池断路保护
- 低压 DC-DC 转换器开关元件（低功率侧）
- 负载开关、背光驱动、信号切换与电平转换
- 通用开关与保护电路（需留足安全余量以防浪涌电流）
四、使用与布局建议
- 热管理：SOT-23 封装散热受限，器件功耗需按 PCB 铜箔面积、过孔和环境温度进行热阻计算。高功率应用建议在器件热焊盘下加大铜箔并使用散热过孔。
- 驱动电平：若需最低 RDS(on)，优先保证 Vgs≥4.5V；在 3.3V 或 2.5V 系统中，注意 RDS(on) 增加导致的功耗上升。
- 开关频率与驱动能力：Qg 与 Ciss 决定驱动器的瞬态电流需求，驱动器需能提供足够峰值电流以减少开关损耗和过渡热耗。
- 布线：缩短源、漏、栅走线，减小寄生电感；栅极加并联阻容用于抑制振铃与 EMI（视具体电路需选取）。
五、选型注意事项
- 电压与电流裕量：30V 的耐压在多数 24V 系统边界，但在有浪涌或反向瞬态时需预留裕量或并联 TVS。
- 散热限制：虽然器件标称 Id 可达 5.8A，但在 SOT-23 上长期通过大电流需按 Pd 和实际结温评估并适当降额使用。
- 若为高速高频开关或更大功率需求，考虑更低 RDS(on) 或更大封装（例如 SOT-223、SO-8）以降低导通与开关损耗。
本概述基于器件典型电气参数与封装特性，实际设计时请参照厂商完整数据手册并在目标环境下完成热和电气验证。
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